1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Revise drawing, update sources. 29 Sep 2000 Monica Poelking B Supplier/address/CAGE change and reformat document 23 May 2002 Thomas M. Hess C Update document to current format and editorial changes throughout. 25 July 2013 Thomas M. Hess REV PAGE REV STATUS
2、 OF PAGES REV C C C C C C C C C C C C C C C PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 PMIC N/A PREPARED BY DESIGN ACTIVITYDEFENSE ELECTRONICS SUPPLY CENTER, DAYTON, OH 454445000 Roger Kissel Original date of drawing 7 August 1990 CHECKED BY TITLE Alan Barone SEMICONDUCTOR DEVICE, POWER SWITCHING, REG
3、ULATOR ASSEMBLY APPROVED BY David E. Moore SIZE CAGE CODE DWG. NO. 90025 A 14933 REV C PAGE 1 OF 15 AMSC N/A 5961E090CURRENT DESIGN ACTIVITY CAGE CODE 037Z3 DEFENSE LOGISTICS AGENCY DLA LAND AND MARITIME, COLUMBUS, OHIO 432183990 Provided by IHSNot for ResaleNo reproduction or networking permitted w
4、ithout license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 2 1. SCOPE 1.1 Scope. This drawing describes the requirements for power switching regulator semiconductor assembly. 1.2 Part or Identifying Number (PIN). The complet
5、e PIN shall be as follows: 90025 Drawing number XX Device type (see 1.2.1) TXV Quality level (see 1.2.2) 1.2.1 Device type. The device types shall identify the polarity and voltage of the devices as follows: Device type Description 01 15 A, 60 V, positive 02 15 A, 80 V, positive 03 15 A, 100 V, posi
6、tive 04 15 A, 60 V, negative 05 15 A, 80 V, negative 06 15 A, 100 V, negative 1.2.2 Quality level. The TX and TXV suffix relates to the JANTX and JANTXV quality level requirements of MILPRF19500. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type V 4-1 (input voltage) V 1-2 (output volt
7、age) V 3-4 (Drive input reverse voltage) I 1 (1) (continuous output current) I 3 (drive current) RJCRCA TJTSTGV V V A A C/W C/W C C 01 02 03 04 05 06 60 80 100 60 80 100 60 80 100 60 80 100 5 5 5 5 5 5 15 15 15 15 15 15 0.4 0.4 0.4 0.4 0.4 0.4 4 4 4 4 4 4 60 60 60 60 60 60 55 to +125 55 to +125 55 t
8、o +125 55 to +125 55 to +125 55 to +125 65 to +150 65 to +150 65 to +150 65 to +150 65 to +150 65 to +150 (1) Applies to TC= +25C, derate 1 percent for each C above TCof +25C. 1.4 Primary electrical characteristics. See table II, group A inspection, for the primary electrical characteristics. 2. APP
9、LICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections Error! Reference source not found., Error! Reference source not found., or Error! Reference source not found. of this specification. This section does not include documents cited in other sections of this s
10、pecification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not
11、 they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitatio
12、n or contract (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 3 SPECIFICATIONS DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semi
13、conductor Devices, General Specification for. STANDARDS DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins
14、 Avenue, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes app
15、licable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MILPRF19500, and on figure 1 herein. 3.1.1 Lead material and finish. Unless otherwise specified, lead fini
16、sh shall be solderable as defined in MILPRF19500. 3.1.2 Internal construction. Multiple chip construction shall be permitted. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500 and as follows: V 41 The voltage measure
17、d between terminal 4 and terminal 1 of the device. V 12 The voltage measured between terminal 1 and terminal 2 of the device. V 34 The voltage measured between terminal 3 and terminal 4 of the device. I 1 The amount of current flow out of terminal 1. I 3 The amount of current flow into terminal 3. V
18、 41(on) The voltage measured from terminal 4 to terminal 1 while the power switch is in the on-state. V 21(on) The voltage measured from terminal 2 to terminal 1 while the diode is in the on-state. I 41 The leakage current measured flowing from terminal 4 to terminal 1 while the power switch is in t
19、he off-state. I 12 The leakage current measured flowing from terminal 1 to terminal 2 while the diode is in the off-state. 3.3 Manufacturer eligibility. To be eligible to supply devices to this drawing, the manufacturer shall have an approved facility in accordance with MILPRF19500 for at least one
20、line. In addition, all devices specified herein shall meet all requirements of MILPRF19500 except qualification requirements. 3.4 Submission of certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in 6.4. T
21、he certificate of compliance submitted to DLA Land and Maritime VAC, prior to listing as an suggested source of supply in 6.4, shall state that the manufacturers product meets the requirements of MILPRF19500 and the requirements herein. 3.5 Marking. Marking shall be in accordance with MILPRF19500. T
22、he full PIN (see 1.2) shall consist of this drawing number, the dash number and the quality level indicator. 3.6 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that the
23、material meets or exceeds the operational and maintenance requirements, and promotes economically advantageous life cycle costs. 3.7 Workmanship. The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability or appearance. Provided by IHSNot for Resale
24、No reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 4 Dimensions (see notes) LTR Inches Millimeters LTR Inches Millimeters Min Max Min Max Min Max Min Max A - .620 - 15.75 G -
25、.350 - 8.89 B .050 .075 1.27 1.90 H .570 .590 14.48 14.99 C .028 .034 0.71 0.86 J .142 .152 3.61 3.86 D .958 .962 24.33 24.43 K .360 - 9.14 - E .190 .210 4.83 5.33 L .250 .340 6.35 8.64 F .190 .210 4.83 5.33 NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information onl
26、y. 2. Case is electrically isolated. 3. Leads may be soldered to within .062 inch (1.57 mm) of base provided temperature-time exposure is 10 minutes Hermetic seal Fine leak Gross leak 1071 Electrical end-points See table I (omit deltas) Subgroup 3 Steady-state operational life Electrical tests 1027
27、340 hours minimum, circuit and conditions as specified on figure 3, TA= +25C See table I (omit deltas) Subgroup 4 De-cap internal visual (design verification) Bond strength 2075 2037 Visual criteria in accordance with qualified design The sample shall be a minimum of 3 devices and shall include all
28、wire sizes. Subgroup 5 Thermal resistance 4081 RJCof the diode (4C/W max) Subgroup 6 High-temperature (non-operating) life Electrical tests 1032 340 hours minimum, TA= +150C See table I (omit deltas) 1/ For sampling plan, see MILPRF19500.Provided by IHSNot for ResaleNo reproduction or networking per
29、mitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 9 TABLE IV. Group C inspection. Inspection 1/ MILSTD750 Method ConditionsSubgroup 1 Physical dimensions 2066 Dimensions as specified on figure 1 Subgroup 2 T
30、hermal shock (liquid to liquid) 1056 Test condition B Terminal strength 2036 Test condition A, weight = 3 pounds (1.36 Kg), time = 15 s Hermetic seal Fine leak Gross leak 1071 Moisture resistance 1021 Omit initial conditioning Electrical end-points See table I (omit deltas) Subgroup 3 Shock 2016 Non
31、-operating, 1500 Gs, 0.5 ms, 5 blows in each orientation (X1, Y1, Z1) Vibration variable frequency 2056 Constant acceleration 2006 1 minute in each orientation, X1, Y1 at 10,000 G minimum Electrical tests See table I (omit deltas) Subgroup 4 Salt atmosphere (corrosion) 1041 Subgroup 5 Not applicable
32、 Subgroup 6 Steady-state operational life 1026 1000 hours, circuit and conditions as specified on figure 3, TA= +25C Electrical tests See table I (omit deltas) 1/ For sampling plan, see MILPRF19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEF
33、ENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 10 TABLE V. Group E inspection for initial design verification. Inspection MILSTD750 Sample plan Method ConditionsSubgroup 1 22 devices c = 0 Temperature cycling (air to air) 1051 No dwell time is
34、 required at +25C, test condition C, except T = 55C to +150C, (1000 cycles including screening), textreme 10 minutes Hermetic seal Fine leak Gross leak 1071 Electrical tests See table I (omit deltas) Subgroup 2 22 devices c = 0 Steady-state dc blocking life Electrical end-points 1027 1,000 hours, ci
35、rcuit and conditions as specified on figure 2, TA= +125C See table I (omit deltas) Subgroup 3 3 devices c = 0 Destructive physical analysis Visual criteria in accordance with design Subgroups 4, 5, and 6 Not applicable Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
36、nse from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 11 NOTE: Test circuits and conditions for 04, 05, and 06 are identical but of opposite polarity. FIGURE 2. High temperature reverse bias circuit. Provided by IHSNot for ResaleN
37、o reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 12 NOTE: No heat sink allowed. TAmust be controlled to prevent thermal runaway. FIGURE 3. Burn-in circuit. Provided by IHSNot
38、 for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 13 NOTE: Test circuit and conditions for 04, 05, and 06 are identical but of opposite polarity VIN= 25 V, VOUT= 5
39、 V. FIGURE 4. Switching speed circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 14 NOTES: 1. Adjust TONto obtain specified IOUT. 2. Nega
40、tive output test circuits and waveforms are identicalbut have opposite polarity. Component values Dash numbers R3LL C RLIOUT H F A 01, 04 2000 150 100 1.0 5 02, 05 2700 150 100 1.0 5 03, 06 3300 150 100 1.0 5 FIGURE 5. Reverse bias clamped inductive test circuit and conditions. Provided by IHSNot fo
41、r ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OH 454445000 SIZE CODE IDENT NO. DWG NO. A 14933 90025 REV C PAGE 15 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the con
42、tract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging act
43、ivities within the Military Service or Defense Agency, or within the military services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CDROM products, or by contacting the responsible packaging activity. 6. N
44、OTES (This section contains information of a general or explanatory nature which may be helpful, but is not mandatory.) 6.1 Intended use. Power switching regulator assemblies conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that
45、 will perform the required function are not available for the OEM application. This drawing is intended exclusively to prevent the proliferation of unnecessary duplicate specifications, drawings, and stock catalog listings. When a military specification exists and the product covered by this drawing
46、 has been qualified for listing on QML-19500, this drawing will be inactivated and will not be used for new design. The QML-19500 product shall be the preferred item for all applications. 6.2 Acquisition requirements. The acquisition requirements should specify the following: a. Complete PIN (see 1.
47、2). b. Requirements for delivery of one copy of the conformance inspection data or certificate of compliance that parts have passed conformance inspection with each shipment of parts by the manufacturer. c. Requirements for packaging and packing. 6.3 Users of record. Coordination of this document fo
48、r future revisions are coordinated only with the suggested sources of supply and the users of record of this document. Requests to be added as a recorded user of this drawing may be achieved by electronic mail at Semiconductordla.mil or by facsimile (614) 6931642 or DSN 850-6939 or in writing to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990, Columbus, OH 432183990. 6
