1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationSemiconductor devices Mechanical and climatic test methodsPart 34: Power cyclingBS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncont
2、rolled Copy, (c) BSINational forewordThis British Standard is the UK implementation of EN 60749-34:2010. It isidentical to IEC 60749-34:2010. It supersedes BS EN 60749-34:2004, which iswithdrawn.The UK participation in its preparation was entrusted to Technical CommitteeEPL/47, Semiconductors.A list
3、 of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not purport to include all the necessary provisions of acontract. Users are responsible for its correct application. BSI 2011 ISBN 978 0 580 69164 5 ICS 31.080.01Compliance with a British
4、 Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 28 February 2011.Amendments issued since publicationAmd. No. Date Text affectedBRITISH STANDARDBS EN 60749-34:2010Licensed Copy: Wang Bin,
5、 ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSIEUROPEAN STANDARD EN 60749-34 NORME EUROPENNE EUROPISCHE NORM December 2010 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnis
6、che Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2010 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60749-34:2010 E ICS 31.080.01 Supersedes EN 60749-34:2004English version Semiconductor devices - Mechanical an
7、d climatic test methods - Part 34: Power cycling (IEC 60749-34:2010) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 34: Cycles en puissance (CEI 60749-34:2010) Halbleiterbauelemente - Mechanische und klimatische Prfverfahren - Teil 34: Lastwechselprfung (IEC 60749-34
8、:2010) This European Standard was approved by CENELEC on 2010-12-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliogra
9、phical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of
10、 a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, G
11、reece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncont
12、rolled Copy, (c) BSIEN 60749-34:2010 Foreword The text of document 47/2068/FDIS, future edition 2 of IEC 60749-34, prepared by IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 60749-34 on 2010-12-01. This European Standard supersedes
13、EN 60749-34:2004. The significant changes with respect from EN 60749-34:2004 include: the specification of tighter conditions for more accelerated power cycling in the wire bond fatigue mode; information that under harsh power cycling conditions high current densities in a thin die metalization migh
14、t initiate electromigration effects close to wire bonds. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following dates were fixed:
15、latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2011-09-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2013-12-01 Annex ZA has been added by CENELEC. _ Endo
16、rsement notice The text of the International Standard IEC 60749-34:2010 was approved by CENELEC as a European Standard without any modification. _ BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSIEN 60749-34:2010 Annex ZA (normativ
17、e) Normative references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the refe
18、renced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Publication Year Title EN/HD Year IEC 60747-1 2006 Semiconductor devices - Part 1: General - - IEC 60747-2 2000 Semico
19、nductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes - - IEC 60747-6 2000 Semi conductor devices - Part 6: Thyristors - - IEC 60749-3 - Semiconductor devices - Mechanical and climatic test methods - Part 3: External visual examination EN 60749-3 - IEC 60749-23 - Semi
20、conductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life EN 60749-23 - BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSI60749-34 IEC:2010 CONTENTS 1 Scope and object5 2 Normative reference
21、s .5 3 Terms and definitions .5 4 Test apparatus .6 5 Procedure 7 6 Test conditions .7 7 Precautions 8 8 Measurements9 9 Failure criteria 9 10 Summary9 Bibliography10 Figure 1 Typical load power P and temperature cycle test condition 28 Table 1 Test conditions 8 BS EN 60749-34:2010Licensed Copy: Wan
22、g Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSI60749-34 IEC:2010 5 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 34: Power cycling 1 Scope and object This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor
23、 device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when low-voltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature.
24、 The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of
25、temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive. NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation. 2 Normative references The following referenced documents are indispensable for the applicat
26、ion of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60747-1:2006, Semiconductor devices Part 1: General IEC 60747-2:2000, Semiconductor devices Discrete devices and i
27、ntegrated circuits Part 2. Rectifier diodes IEC 60747-6:2000, Semiconductor devices Part 6: Thyristors IEC 60749-3, Semiconductor devices Mechanical and climatic test methods Part 3: External visual examination IEC 60749-23, Semiconductor devices Mechanical and climatic test methods Part 23: High te
28、mperature operating life 3 Terms and definitions For the purposes of this document the following terms and definitions apply. NOTE Further terms and definitions concerning semi-conductor devices are contained in the IEC 60747 and IEC 60748 series. 3.1 3.2 load current current to which the devices ar
29、e subjected to produce power loss P case temperature Tctemperature of the base of the device under test facing the heat sink BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSI 6 60749-34 IEC:2010 3.3 3.4 3.5 3.6 3.7 3.8 3.9 sink tem
30、perature Tstemperature of the heat sink measured in close proximity to the device under test junction temperature excursion Tvjdifference between maximum and minimum virtual junction temperature of the device under test during one power cycle case temperature excursion Tcdifference between maximum a
31、nd minimum case temperature during one power cycle on-time time interval while device under test is conducting load current power loss P power dissipation of the devices under test as calculated from current waveform during on-time and from characteristic data in the procurement documents off-time t
32、ime interval for cooling down cycle period sum of on-time and off-time 4 Test apparatus The apparatus required for this test shall consist of heat sinking for a group of devices or alternatively for each individual device under test with the purpose of dissipating the forward conduction losses and o
33、f controlling on- and off-times. The heat sinking can be selected from natural or forced air convection or liquid cooling. Pre-selected temperature excursions of the device ground plates and of the die junctions, as well as on- and off-times determine heat sinking set-up and parameters. Sockets or o
34、ther mounting means shall be provided so that reliable electrical contact can be made without excessive heat transfer to the device terminals. Power supplies shall be capable of maintaining the specified operating conditions throughout the testing period despite normal variations in line voltage or
35、ambient temperatures. On- and off-switching of load currents should be provided by the test circuit independent of any (gate-) control functions of the devices under test. On- and off-times (cycle period) shall be controlled by monitoring either heat sink Tsor case temperature Tc. Alternatively, the
36、 cycle period can also be controlled by fixed time settings, if appropriate. The test circuit should also be designed so that the existence of abnormal or failed devices does not alter the specified conditions for other units on test (e.g. the latter might be accomplished by exchanging defective uni
37、ts with new ones). Care should be taken to avoid possible damage from transient voltage spikes or other conditions that might result in electrical, thermal or mechanical overstress. BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSI
38、60749-34 IEC:2010 7 5 Procedure When special mounting or heat sinking is required, the details shall be specified in the applicable procurement documents. Load current and waveforms shall be selected close to the preferred application of the devices under test, as outlined below. Rectifier devices s
39、uch as diodes or SCRs that are normally used as a.c. lines converters should be connected to 50 Hz or 60 Hz a.c. power supplies; bridge rectifiers should be operated as such, i.e. a.c. line voltages applied to the a.c. input terminals and output terminals shorted via shunt resistors to monitor load
40、current. MOS-controlled devices such as power MOSFETs or IGBTs should be connected to d.c. power supplies. Modules with multiple functions can be operated stepwise and separate according to their internal circuits. Gate-controllable devices such as SCRs, IGBTs and MOSFETs should be set into a contin
41、uous forward conductive state by appropriate gate controls throughout the entire test duration. The power should be applied and suitable checks made to assure that all devices are properly biased. During the test, the power applied to the devices shall be alternately cycled as given in Table 1, unle
42、ss otherwise specified in the relevant specification. The devices shall concurrently be cycled between temperature extremes for the specified number of cycles. The power cycling test shall be continuous except when parts are removed from the test fixtures for interim electrical measurements. If the
43、test is interrupted as a result of device, power or equipment failure, the test shall restart from the point of stoppage. 6 Test conditions The test condition shall be selected from those outlined in Table 1. The relationship of on-time to off-time shall be the same for all devices under test. It is
44、 sufficient that Tsor Tcis monitored closely below the centre of one device under test, provided that load and heat sinking conditions are properly controlled for all other devices. Junction temperatures Tvj, junction temperature excursions Tvjand case temperature excursions Tc, shall be kept within
45、 the same range for all devices, as given in Table 1 below. Off-time shall be adjusted until Tvj has approached Tcwithin C before a new cycle starts, as illustrated in Figure 1. 05+Junction temperatures Tvj (and case temperatures Tcif applicable) shall be calculated from the given thermal impedances
46、 in the applicable procurement documents and from the power loss P of the devices under test, taking into account load current waveforms. The number of cycles Ncto be performed shall be selected in integer multiples of 100 000 for test condition 1, 1 000 for test conditions 2 and 3. No minimum requi
47、rements for Ncare defined since this figure is very dependent on the application; Ncmight be millions of cycles in traction applications under test condition 1. BS EN 60749-34:2010Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 22/04/2011 07:11, Uncontrolled Copy, (c) BSI 8 60749-34 IEC:2010
48、Table 1 Test conditions Temperature extremes Test condition Cycle period Example of failure mode TvjC TTcC vjC 45 (5) to 125 ( ) 1a 60 5 010Sensitive to wire bond fatigue b1 s to 15 s 30 a45 (5) to 150 ( ) 1b 80 5 01045 (5) to 125 ( ) 2 75 5 50 (20) 010 Sensitive to soft solder c and wire bond fatig
49、ue 1 min to 15 min 45 (5) to 150 ( ) 3 60 (20) 95 5 010aTmight be very small because the device is normally operated in transient regime during short cycling. c1bSee 1 . Under harsh power cycling conditions high current densities in a thin die metalization might initiate electromigration effects close to wire bonds. cSee 2. TimeT CTvj1250PTcPIEC 135/04Figure 1 Typical load power P and temperature cycle test condition 2 7 Precautions Load cu
