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    BS EN 60747-5-5-2011 Semiconductor devices Discrete devices Optoelectronic devices Photocouplers《半导体器件 分立器件 光电器件 光电耦合器》.pdf

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    BS EN 60747-5-5-2011 Semiconductor devices Discrete devices Optoelectronic devices Photocouplers《半导体器件 分立器件 光电器件 光电耦合器》.pdf

    1、raising standards worldwideNO COPYING WITHOUT BSI PERMISSION EXCEPT AS PERMITTED BY COPYRIGHT LAWBSI Standards PublicationSemiconductor devices Discrete devicesPart 5-5: Optoelectronic devices PhotocouplersBS EN 60747-5-5:2011Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, U

    2、ncontrolled Copy, (c) BSINational forewordThis British Standard is the UK implementation of EN 60747-5-5:2011. It is identical to IEC 60747-5-5:2007. It partially supersedes BS EN 60747-5-1:2001, BS EN 60747-5-2:2001, and BS EN 60747-5-3:2001.The UK participation in its preparation was entrusted to

    3、Technical Committee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained on request to its secretary.This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. BSI 2011ISBN 978 0

    4、580 53625 0 ICS 31.080.01; 31.260Compliance with a British Standard cannot confer immunity from legal obligations.This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 June 2011.Amendments issued since publicationAmd. No. Date Text affectedBRITI

    5、SH STANDARDBS EN 60747-5-5:2011Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSIEUROPEAN STANDARD EN 60747-5-5 NORME EUROPENNE EUROPISCHE NORM February 2011 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisatio

    6、n Electrotechnique Europisches Komitee fr Elektrotechnische Normung Management Centre: Avenue Marnix 17, B - 1000 Brussels 2011 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-5-5:2011 E ICS 31.080.01; 31.260 English version

    7、 Semiconductor devices - Discrete devices - Part 5-5: Optoelectronic devices - Photocouplers (IEC 60747-5-5:2007) Dispositifs semiconducteurs - Dispositifs discrets - Partie 5-5: Dispositifs optolectroniques - Photocoupleurs (CEI 60747-5-5:2007) Halbleiterbauelemente - Einzel-Halbleiterbauelemente -

    8、 Teil 5-5: Optoelektronische Bauelemente -Optokoppler (IEC 60747-5-5:2007) This European Standard was approved by CENELEC on 2011-01-02. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a nati

    9、onal standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version i

    10、n any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cypru

    11、s, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. BS EN 60747-5-5:2011Licensed C

    12、opy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSIEN 60747-5-5:2011 - 2 - Foreword The text of document 47E/332/FDIS, future edition 1 of IEC 60747-5-5, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to th

    13、e IEC-CENELEC parallel vote and was approved by CENELEC as EN 60747-5-5 on 2011-01-02. This EN 60747-5-5:2011 replaces the clauses for photocouplers (or optocouplers) described in EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3, including their amendments. The contents for phototransistors and photothyr

    14、istors in EN 60747-5-1, EN 60747-5-2 and EN 60747-5-3, including their amendments, will be considered obsolete as of the effective date of publication of this standard. NOTE Photocouplers that are certified to the previous version of the photocoupler standard, namely EN 60747-5-1/2/3, should be cons

    15、idered in compliance with the requirements and provisions of EN 60747-5-5. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CEN and CENELEC shall not be held responsible for identifying any or all such patent rights. The following

    16、dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2012-01-02 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2014-01-02 Annex ZA has been added

    17、by CENELEC. _ Endorsement notice The text of the International Standard IEC 60747-5-5:2007 was approved by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following notes have to be added for the standards indicated: IEC 60270:2000 NOTE Harmoni

    18、zed as EN 60270:2001 (not modified). IEC 60747-5-1:1997 NOTE Harmonized as EN 60747-5-1:2001 (not modified). IEC 60747-5-2:1997 NOTE Harmonized as EN 60747-5-2:2001 (not modified). IEC 60747-5-3:1997 NOTE Harmonized as EN 60747-5-3:2001 (not modified). _ BS EN 60747-5-5:2011Licensed Copy: Wang Bin,

    19、ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSI- 3 - EN 60747-5-5:2011 Annex ZA (normative) Normative references to international publications with their corresponding European publications The following referenced documents are indispensable for the application of this do

    20、cument. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. NOTE When an international publication has been modified by common modifications, indicated by (mod), the relevant EN/HD applies. Pu

    21、blication Year Title EN/HD Year IEC 60065 (mod) 2001 Audio, video and similar electronic apparatus - Safety requirements EN 60065 + corr. August + A11 2002 2007 2008 IEC 60068-1 1988 Environmental testing - Part 1: General and guidance EN 60068-11)194 IEC 60068-2-1 2007 Environmental testing - Part

    22、2-1: Tests - Test A: Cold EN 60068-2-1 2007 IEC 60068-2-2 2007 Environmental testing - Part 2-2: Tests - Test B: Dry heat EN 60068-2-2 2007 IEC 60068-2-6 2007 Environmental testing - Part 2-6: Tests - Test Fc: Vibration (sinusoidal) EN 60068-2-6 2008 IEC 60068-2-14 1984 Environmental testing - Part

    23、2: Tests - Test N: Change of temperatureEN 60068-2-142) 3)1999 IEC 60068-2-17 1994 Environmental testing - Part 2: Tests - Test Q: Sealing EN 60068-2-17 1994 IEC 60068-2-27 2008 Environmental testing - Part 2-27: Tests - Test Ea and guidance: Shock EN 60068-2-27 2009 IEC 60068-2-30 2005 Environmenta

    24、l testing - Part 2-30: Tests - Test Db: Damp heat, cyclic (12 h + 12 h cycle) EN 60068-2-30 2005 IEC 60068-2-58 2004 Environmental testing - Part 2-58: Tests - Test Td: Test methods for solderability, resistance to dissolution of metallization and to soldering heat of surface mounting devices (SMD)

    25、EN 60068-2-58 + corr. December 2004 2004 IEC 60068-2-78 2001 Environmental testing - Part 2-78: Tests - Test Cab: Damp heat, steady state EN 60068-2-78 2001 1) EN 60068-1 includes A1 to IEC 60068-1 + corr. October 1988. 2) EN 60068-2-14 includes A1 to IEC 60068-2-14. 3) EN 60068-2-14 is superseded b

    26、y EN 60068-2-14:2009, which is based on IEC 60068-2-14:2009. BS EN 60747-5-5:2011Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSIEN 60747-5-5:2011 - 4 - Publication Year Title EN/HD Year IEC 60112 2003 Method for the determination of the proof and t

    27、he comparative tracking indices of solid insulating materials EN 60112 2003 IEC 60216-1 2001 Electrical insulating materials - Properties of thermal endurance - Part 1: Ageing procedures and evaluation of test results EN 60216-1 2001 IEC 60216-2 2005 Electrical insulating materials - Thermal enduran

    28、ce properties - Part 2: Determination of thermal endurance properties of electrical insulating materials - Choice of test criteria EN 60216-2 2005 IEC 60664-1 2007 Insulation coordination for equipment within low-voltage systems - Part 1: Principles, requirements and tests EN 60664-1 2007 IEC 60672-

    29、2 1999 Ceramic and glass insulating materials - Part 2: Methods of test EN 60672-2 2000 IEC 60695-11-5 2004 Fire hazard testing - Part 11-5: Test flames - Needle-flame test method - Apparatus, confirmatory test arrangement and guidance EN 60695-11-5 2005 BS EN 60747-5-5:2011Licensed Copy: Wang Bin,

    30、ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSI 2 60747-5-5 IEC:2007 CONTENTS 1 Scope.8 2 Normative references 8 3 Photocoupler . .9 3.1 Semiconductor material 9 3.2 Details of outline and encapsulation .9 3.2.1 IEC and/or national reference number of the outline drawing .

    31、 9 3.2.2 Method of encapsulation: glass/metal/plastic/other . .9 3.2.3 Terminal identification and indication of any connection between a terminal and the case 9 3.3 Type of photocouplers . .9 3.3.1 DC input photocoupler .9 3.3.2 AC input photocoupler .9 3.3.3 Phototransistor photocoupler . 9 3.3.4

    32、Photodarlington photocoupler . .9 3.3.5 Photothyristor photocoupler 9 3.3.6 Phototriac photocoupler. .10 3.3.7 IC photocoupler 10 3.3.8 FET photocoupler . .10 3.3.9 Photodiode photocoupler . .10 3.3.10 IC input photocoupler 10 3.3.11 Solid state opto relay.10 4 Terms related to ratings and character

    33、istics for photocouplers . 10 4.1 Current transfer ratio . .10 4.1.1 Static value of the (forward) current transfer ratio hF(ctr). .10 4.1.2 Small-signal short-circuit (forward) current transfer ratio hf(ctr) .10 4.2 Cut-off frequency fco . .10 4.3 Input-to-output capacitance CIO . 10 4.4 Isolation

    34、resistance RIO .10 4.5 Isolation voltage . .10 4.5.1 DC isolation voltage VIO. 11 4.5.2 Repetitive peak isolation voltage VIORM . 11 4.5.3 Surge isolation voltage VIOSM 11 4.6 Terms related to photocouplers with phototriac output and/or solid state opto-relay with triac output . .11 4.6.1 Repetitive

    35、 peak voltage . .11 4.6.2 Repetitive peak off-state voltage VDRM. 11 4.6.3 Repetitive peak reverse voltage VRRM. .11 4.6.4 RMS on-state current IT(RMS) 11 4.6.5 Peak off-state current IDRM . .11 4.6.6 Peak on-state voltage VTM.11 4.6.7 DC off-state current IBD . 11 4.6.8 DC on-state voltage VT . .11

    36、 4.6.9 Holding current IH . 11 4.6.10 Critical rate of rise of off-state voltage dV/dt . 11 BS EN 60747-5-5:2011Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSI60747-5-5 IEC:2007 3 4.6.11 Trigger input current IFT. 12 4.7 Common mode transient immun

    37、ity CMTI .12 5 Terms for photocoupler providing protection against electrical shock. 12 5.1 Safety ratings of a photocoupler for reinforced isolation . . 12 5.2 Electrical safety requirements of a photocoupler for reinforced isolation 12 5.2.1 Partial discharge pd. 12 5.2.2 Apparent charge qpd, q .

    38、.12 5.2.3 Threshold apparent charge qpd(TH), qTH12 5.2.4 Test voltages for the partial-discharge test of a photocoupler 12 5.2.5 Test voltage Vpd(t), Vt.12 5.2.6 Partial discharge test voltage Vpd(t) .13 5.2.7 Initial test voltage Vpd(ini), Vini .13 5.2.8 Apparent charge measuring voltage Vpd(m), Vm

    39、 13 5.2.9 Partial-discharge inception voltage Vpd(i), Vi. .13 5.2.10 Partial-discharge extinction voltage Vpd(e), Ve.13 5.2.11 Time intervals of the test voltage .13 5.3 Isolation voltages and isolation test voltages for photocouplers providing protection against electrical shock. .16 5.3.1 Rated is

    40、olation voltage . 16 5.4 Limiting values (absolute maximum system) over the operating temperature range, unless otherwise stated . 16 5.4.1 Minimum and maximum storage temperatures Tstg . 16 5.4.2 Minimum and maximum ambient or reference-point operating temperatures Tambor Tref .16 5.4.3 Maximum sol

    41、dering temperature Tsld .16 5.4.4 Maximum continuous (direct) reverse input voltage VR. 16 5.4.5 Maximum collector-emitter voltage, with the base open-circuited VCEO .16 5.4.6 Maximum collector-base voltage, where an external base connection is present, with the emitter open-circuited VCBO. .16 5.4.

    42、7 Maximum emitter-base voltage, where an external base connection is present, with the collector open-circuited VEBO .16 5.4.8 Maximum emitter-collector voltage, where no external base connection is present VECO.16 5.4.9 Maximum continuous (direct) or repetitive peak isolation voltage VIOor VIORM .

    43、.16 5.4.10 Where appropriate, maximum surge isolation voltage VIOSM . .16 5.4.11 Maximum continuous collector current IC 17 5.4.12 Maximum continuous forward input current IFat an ambient or reference-point temperature of 25 C and derating curve or derating factor. 17 5.4.13 Maximum peak forward inp

    44、ut current IFMat an ambient or reference-point temperature of 25 C and under specified pulse conditions . .17 5.4.14 Maximum power dissipation Ptrnof the output transistor at an ambient or reference-point temperature of 25 C and a derating curve or derating factor . .17 5.4.15 Maximum total power di

    45、ssipation of the package Ptotat an ambient or reference-point temperature of 25 C and derating curve or derating factor.17 BS EN 60747-5-5:2011Licensed Copy: Wang Bin, ISO/EXCHANGE CHINA STANDARDS, 12/08/2011 08:33, Uncontrolled Copy, (c) BSI 4 60747-5-5 IEC:2007 6 Electrical characteristics.17 6.1

    46、Phototransistor output photocoupler . .17 6.2 Phototriac output photocoupler or solid state opto-relay . . 19 7 Photocouplers providing protection against electrical shock. 19 7.1 Type.19 7.2 Ratings (have to be mentioned in a special section in the manufacturers data sheet). .19 7.2.1 Safety rating

    47、s . 19 7.2.2 Functional ratings.19 7.2.3 Rated isolation voltages . 19 7.3 Electrical safety requirements .20 7.4 Electrical, environmental and/or endurance test information (supplementary information) . .20 8 Measuring methods for photocouplers . 27 8.1 Current transfer ratio hF(ctr)27 8.2 Input-to

    48、-output capacitance CIO . 28 8.3 Isolation resistance between input and output RIO 29 8.4 Isolation test. 30 8.5 Partial discharges of photocouplers31 8.6 Collector-emitter saturation voltage VCE(sat)of a photocoupler . 34 8.6.1 Collector-emitter saturation voltage (d.c. method) 34 8.6.2 Collector-e

    49、mitter saturation voltage (pulse method) . 35 8.7 Switching times ton, toff of a photocoupler . 36 8.8 Peak off-state current IDRM 37 8.9 Peak on-state voltage VTM . 39 8.10 DC off-state current IBD .41 8.11 DC on-state voltage VT 42 8.12 Holding current IH .43 8.13 Critical rate of rise of off-state voltage dV/dt.43 8.14 Trigger input current IFT.46 8.15 Measuring methods of common mode transient immunity (CMTI) for photocoupler 47 9 Testing methods of electrical rating for phototriac coupler . 49 9.1 Repetitiv


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