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    ASTM F2113-2001(2007) Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications《薄膜电子.pdf

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    ASTM F2113-2001(2007) Standard Guide for Analysis and Reporting the Impurity Content and Grade of High Purity Metallic Sputtering Targets for Electronic Thin Film Applications《薄膜电子.pdf

    1、Designation: F 2113 01 (Reapproved 2007)Standard Guide forAnalysis and Reporting the Impurity Content and Grade ofHigh Purity Metallic Sputtering Targets for Electronic ThinFilm Applications1This standard is issued under the fixed designation F 2113; the number immediately following the designation

    2、indicates the year oforiginal adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide covers sputtering targets

    3、used as thin filmsource material in fabricating semiconductor electronic de-vices. It should be used to develop target specifications forspecific materials and should be referenced therein.1.2 This standard sets purity grade levels, analytical meth-ods and impurity content reporting method and forma

    4、t.1.2.1 The grade designation is a measure of total metallicimpurity content. The grade designation does not necessarilyindicate suitability for a particular application because factorsother than total metallic impurity may influence performance.2. Referenced Documents2.1 ASTM Standards:2F 1593 Test

    5、 Method for Trace Metallic Impurities in Elec-tronic Grade Aluminum by High Mass-Resolution Glow-Discharge Mass Spectrometer3. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 finished product, nfor the purpose of this standard,a “finished product” is a manufactured sputtering tar

    6、get, readyfor use.3.1.2 material lot, nfor the purpose of this standard,a“lot” is material consolidated into one ingot, and processed asone continuous batch in subsequent thermal-mechanical treat-ments.3.1.3 target specification, nfor the purpose of this stan-dard, a specification for a sputtering t

    7、arget source material forelectronic thin film applications.3.2 Abbreviations:3.2.1 mdlminimum detection limit4. Impurities4.1 The minimum set of metallic impurity elements to beanalyzed shall be developed and listed in the target specifica-tion or agreed upon by the purchaser and supplier.4.2 Accept

    8、able analysis methods and detection limits are tobe specified in the target specification. Elements not detectedwill be counted and reported as present at the minimumdetection limit (“mdl”) for the method used. Additional ele-ments may be analyzed and reported as agreed upon betweenthe purchaser and

    9、 the supplier, but these elements shall not becounted in defining the grade designation.4.3 Certain elements may present particular analysis prob-lems, such as interferences. The limits, analysis method, andmdl may, in such cases, be as agreed upon between thepurchaser and the supplier.4.4 Nonmetall

    10、ic elements, which shall be analyzed andreported, are carbon, hydrogen, nitrogen, oxygen, and sulfur.Maximum limits for nonmetallic impurities shall be agreedupon between the purchaser and the supplier.4.5 Acceptable limits and analytical techniques for particu-lar elements in critical applications

    11、may be agreed uponbetween the purchaser and the supplier.5. Classification5.1 Grades of metallic sputtering targets are defined in Table1, based upon total metallic impurity content of the set ofelements as specified in 4.1. Impurity contents are reported inparts per million by weight (wt ppm).5.2 P

    12、urity grade and total metallic impurity levels are basedupon the set of elements as specified in 4.1.6. Sampling6.1 Analysis for impurities and gases shall be performed onsamples that represent the finished sputtering target.6.1.1 Unless otherwise agreed upon between the purchaserand the supplier, i

    13、mpurity analyses for metallic and nonmetal-lic impurities shall be made by the supplier for one or moresample specimens that are representative of the production lot.1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.17 on S

    14、putter Metallization.Current edition approved June 1, 2007. Published July 2007. Originally approvedin 2001. Last previous edition approved in 2001 as F 2113 - 01e1.2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Bo

    15、ok of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.If more than one sample specimen is used, the results of theanalyses shall be ave

    16、raged to establish conformance with thegrade designation (5.1), other metallic impurity limits (4.2, 4.3,and 4.5), and the agreed upon limits for nonmetallic content(4.4).7. Analytical Methods7.1 Analysis for impurities listed as specified in Section 4shall be performed using methods, techniques and

    17、 mdls appro-priate to the material, grade and special agreements (4.3-4.5):7.1.1 Trace Metallic ImpuritiesThe target specificationshould state the preferred method of analysis. Mdl should be0.01 wt. ppm for 6N grade, 0.1 ppm for 5N5 and 5N grade,and 1 wt. ppm for 4N5 and 4N grade. A discussion ofdet

    18、ection limit determination is given in Test Method F 1593 orin Currie.37.1.2 Carbon, Oxygen, SulfurBy fusion and gasextraction/infrared spectroscopy4with mdl typically # 10weight ppm.7.1.3 NitrogenBy fusion and gas extraction with mdltypically # 10 weight ppm.7.1.4 HydrogenBy fusion and gas extracti

    19、on with mdltypically # 3 weight ppm.7.1.5 Other analytical techniques may be used providedthey can be proved equivalent to the methods specified andhave sum of mdl for the list defined in 4.1 less than or equal toone tenth (0.1) of the maximum impurity content listed in Table1 (for a given grade).8.

    20、 Certification8.1 When required by the purchaser, the supplier shallprovide a certificate of analysis/compliance that documents thefinished target.8.2 The certificate of analysis/compliance shall state themanufacturers or suppliers name, the suppliers lot number,the grade level (Section 5), impurity

    21、 levels (Section 4), methodof analysis with mdl for each element (Section 7), and anyother information as agreed upon between the purchaser andthe supplier.8.2.1 Impurities Reporting Option 1If agreed upon be-tween the purchaser and the supplier, impurity levels may bereported using actual analytica

    22、l results for the material lot fromwhich the sputtering target is made (3.1.1). All impurity levels,except thorium and uranium, shall be reported in weight ppm.Thorium and uranium are generally controlled at very lowlevels in material for electronic thin film applications and maybe reported in parts

    23、 per billion by weight (weight ppb).Non-detected trace impurities (from the list as specified in 4.1)shall be reported as present at the mdl concentration (Section7).8.2.2 Impurities Reporting Option 2If agreed upon be-tween the purchaser and the supplier, impurity levels may bereported by citing ty

    24、pical results based upon historical data forthe same process.9. Keywords9.1 electronics; purity analysis; purity grade; sputtering;target; thin filmASTM International takes no position respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users

    25、of this standard are expressly advised that determination of the validity of any such patent rights, and the riskof infringement of such rights, are entirely their own responsibility.This standard is subject to revision at any time by the responsible technical committee and must be reviewed every fi

    26、ve years andif not revised, either reapproved or withdrawn. Your comments are invited either for revision of this standard or for additional standardsand should be addressed to ASTM International Headquarters. Your comments will receive careful consideration at a meeting of theresponsible technical

    27、committee, which you may attend. If you feel that your comments have not received a fair hearing you shouldmake your views known to the ASTM Committee on Standards, at the address shown below.This standard is copyrighted by ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, P

    28、A 19428-2959,United States. Individual reprints (single or multiple copies) of this standard may be obtained by contacting ASTM at the aboveaddress or at 610-832-9585 (phone), 610-832-9555 (fax), or serviceastm.org (e-mail); or through the ASTM website(www.astm.org).3Currie, L. A., “Limits for Quali

    29、tative Detection and Quantitative Determina-tion,” Analytical Chemistry, Vol 40, 1968, pp 586-593.4Analytical equipment manufactured by Leco Corporation, St. Joseph, MI hasbeen found satisfactory for making fusion and gas extraction analyses for carbon,oxygen, sulfur, nitrogen and hydrogen at the required mdls.TABLE 1 Metallic Sputtering Target GradesGrade Purity, % Maximum Total Metallic Impurity Content, wt ppm3N5 99.95 5004N 99.99 1004N5 99.995 505N 99.999 105N5 99.9995 56N 99.9999 1F 2113 01 (2007)2


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