1、Designation: E 1162 06Standard Practice forReporting Sputter Depth Profile Data in Secondary Ion MassSpectrometry (SIMS)1This standard is issued under the fixed designation E 1162; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, th
2、e year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This practice covers the information needed to describeand report instrumentation, specimen parameters, exp
3、erimentalconditions, and data reduction procedures. SIMS sputter depthprofiles can be obtained using a wide variety of primary beamexcitation conditions, mass analysis, data acquisition, andprocessing techniques (1-4).21.2 LimitationsThis practice is limited to conventionalsputter depth profiles in
4、which information is averaged over theanalyzed area in the plane of the specimen. Ion microprobe ormicroscope techniques permitting lateral spatial resolution ofsecondary ions within the analyzed area, for example, imagedepth profiling, are excluded.1.3 This standard does not purport to address all
5、of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:3E 673 Terminology Rela
6、ting to Surface Analysis3. Terminology3.1 For definitions of terms used in this practice, seeTerminology E 673.4. Summary of Practice4.1 Experimental conditions and variables that affect SIMSsputter depth profiles (1-4) and tabulated raw data (wherefeasible) are reported to facilitate comparisons to
7、 other labo-ratories or specimens, and to results of other analytical tech-niques.5. Significance and Use5.1 This practice is used for reporting the experimentalconditions as specified in Section 6 in the “Methods” or“Experimental” sections of other publications (subject toeditorial restrictions).5.
8、2 The report would include specific conditions for eachdata set, particularly, if any parameters are changed fordifferent sputter depth profile data sets in a publication. Forexample, footnotes of tables or figure captions would be usedto specify differing conditions.6. Information to Be Reported6.1
9、 Instrumentation:6.1.1 If a standard commercial SIMS system is used, specifythe manufacturer and instrument model number and type ofanalyzer, such as, magnetic sector, quadrupole, time-of-flight,and so forth. Specify, the model numbers and manufacturer ofany accessory or auxiliary equipment relevant
10、 to the depthprofiling study (for example, special specimen stage, primarymass filter, primary ion source, electron flood gun, vacuumpumps, data acquisition system, and source of software, etc.).6.1.2 If a nonstandard commercial SIMS system is used,specify the manufacturer and model numbers of compo
11、nents(for example, primary ion source, mass analyzer, data system,and accessory equipment).6.2 Specimen:6.2.1 Describe the specimen as completely as possible. Forexample, specify its bulk composition, preanalysis history,physical dimensions. If the specimen contains dopants, forexample, semiconducto
12、rs, report the dopant type and concen-tration. For multicomponent specimens, state the degree ofspecimen homogeneity. Describe any known contaminants.6.2.2 State the method of mounting and positioning thespecimen for analysis. Specify any physical treatment of thespecimen mounted in the SIMS analysi
13、s chamber (for example,heated, cooled, electron bombarded, and so forth). Note thespecimen potential relative to ground. Describe the method ofspecimen charge compensation used (if any), for example,conductive coatings or grid, electron flooding, etc.6.3 Experimental Conditions:1This practice is und
14、er the jurisdiction of ASTM Committee E42 on SurfaceAnalysis and is the direct reponsibility of Subcommittee E42.06 on SIMS.Current edition approved Nov. 1, 2006. Published November 2006. Originallyapproved in 1987. Last previous edition approved in 2001 as E 1162 87 (2001).2The boldface numbers in
15、parentheses refer to the references at the end of thisstandard.3For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM websit
16、e.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.6.3.1 Primary Ion SourceGive the following parameterswhenever possible: Composition (if mass filtered, give thespecific ion and isotope, for example,16O); angle of incidence(relative
17、to the surface normal); ion beam energy; charge stateand polarity; current (including the method used for measure-ment, for example, Faraday cup); beam diameter (including themethod used for measurement); size and shape of sputteredarea; primary beam current density for a stationary beam(A/m2); beam
18、 raster size and rate (if used); primary ion doserate averaged over the sputtered area (ions/m2s). If the primaryion beam is modulated at some point during the profile (such asin a time-of-flight SIMS) details of the modulation should bedescribed (pulse width, repetition rate, extent of beam bunch-i
19、ng, and so forth). In addition, any special alignment or tuningof the primary column should be specified or referenced. Stateif this is a dual beam or single beam analysis. In the case ofdual beam depth profiling (one continuous and the otherroused), parameters of both primary ion sources should bed
20、escribed in detail.6.3.2 Secondary Ion Mass SpectrometerGive the follow-ing parameters whenever possible: analyzed area versus totalsputtered area (for example, image field/selected area aperturesize for stigmatic ion microscopes; raster/electronic signalgating for ion microprobes, and so forth); co
21、llection angle(angle between surface normal and secondary ion collectionoptics); the spectrometer energy acceptance/bandpass withinthe secondary ion energy distribution used during depth pro-files (particularly important if energy discrimination is used toremove polyatomic ion interferences); reflec
22、tron voltages,pulsing conditions, and post-acceleration voltages for time-of-flight instruments; mass resolution (M/DM where DM is thepeak width at a specified fraction of the maximum intensity(such as, 50 % or 10 %) for an ion peak of mass M); methodused to perform selected ion monitoring during sp
23、uttering (forexample, electrostatic or magnetic peak switching proceduresfor double focusing instruments); the type of specimen chargecompensation used if any (for example, changes in samplepotential biasing during depth profile). If any electron floodgun is employed, specify electron current or dos
24、e (electrons /m2).6.3.3 Secondary Ion Intensity MeasurementSpecify thetype of detector (for example, electron multiplier, Faraday cup)and detector bias used including the counting (integration) timeused for each measurement of each ion of interest. For analogdetection, give the detector system time
25、constant. For pulsecounting detection, give the pulse pair resolution includingdead time corrections. For rapidly rastered primary beams,correct intensities (counts/second) to instantaneous values bymultiplying by the ratio of total sputtered area to the analyzedarea (important procedure to help ass
26、ess possible detectorsaturation limitations).6.3.4 VacuumSpecify pressures in the primary column,specimen chamber, mass spectrometer prior to and duringsputter depth profiling, including the type of vacuum pumping.Also give the composition of the residual gas, if available. Ifflooding of the sample
27、surface region or backfilling of theanalysis chamber with reactive gases (for example, oxygen) isused give the details of the procedure including the partialpressure of the reactive gas.6.4 Quantification by Data Reduction:6.4.1 ConcentrationsIf any elemental concentrations arepresented, state clear
28、ly the methodology used for quantification(6 and 7). In addition, specify the details of any external orinternal standards used including methods for normalization incomparing ion intensities in reference materials to ion intensi-ties in specimen depth profiles. A commonly used methodmakes use of Re
29、lative Sensitivity Factors derived from mea-surements of ion-implanted reference materials to calculateimpurity concentrations in similar matrices (8). Specify refer-ence materials made by ion implantation according to ionspecies, isotope, dose, energy, matrix, and reference data usedto calculate pe
30、ak concentration of the implant in the referencematerial. Report analytical precisions for multiple determina-tions of concentrations.6.4.2 Depth ScalesSpecify the methods used (if any) torelate elapsed sputter time to a depth sputtered (that is, depthscale calibration). Possible techniques include
31、measurementsof: times to remove reference material films of known thick-ness, ion implant standards with peak concentrations occurringat calculated depths (for example, by TRIM of SRIM simula-tion (9), or crater depths via various stylus, profilometry orinterferometry techniques. Report any nonunifo
32、rm sputteringof the specimen, if observed.6.5 Display of SIMS Sputter Depth Profile Figures:6.5.1 Raw Ion Intensity Versus Sputtering Time (or Fluence)ProfilesThe left hand vertical axis gives ion intensitiesmeasured in arbitrary units (analog detection), or in instanta-neous counts per second (puls
33、e counting, see 6.3.3). Theintensity axis can be either linear or logarithmic dependingupon suitability relative to the dynamic range of the profile.The scale selected should be clearly indicated. The bottomhorizontal axis will be the sputtering time reported in time unitsor fluence (coulomb/m2or io
34、ns/m2). If the primary ion param-eters are changed during the profile in a manner that affects thesputter rate, the time axis must be adjusted accordingly.6.5.2 Quantified Depth ProfilesIf elemental concentra-tions or depth scales are quantified as described in 6.4.1 and6.4.2, use the following proc
35、edure. The right hand vertical axiscan be reported in units of atomic percent, weight percent, oratoms per cubic metre/centimetre, whichever is most conve-nient or appropriate. The top horizontal axis can be indicated inunits of depth (typically nanometres or micrometres). Anexample of the format is
36、 shown in Fig. 1 for a11B implantprofile in silicon.E1162062REFERENCES(1) Hofmann, S., “Quantitative Depth Profiling in Surface Analysis,”Surface and Interface Analysis, Vol 2, 1980, p. 148.(2) Zinner, E., “Depth Profiling by Secondary Ion Mass Spectrometry,”Scanning, Vol 3, 1980, p. 57.(3) Wittmaac
37、k, K., “Depth Profiling by Means of SIMS: Recent Progressand Current Problems,” Radiation Effects, Vol 63, 1982, p. 205.(4) Williams, P., “Secondary Ion Mass Spectrometry,” Applied AtomicCollision Physics, Vol 4, 1983, p. 327.(5) Traxlmayr, U., Riedling, K., and Zinner, E., “On the Dead-TimeCorrecti
38、on of Ion COunting Systems During Gated Raster SIMSMEasurements,” International Journal of Mass Spectrometry and IonProcesses, Vol. 61, 1984, p. 261.(6) Werner, H. W., “Quantitative Secondary Ion Mass Spectrometry: AReview,” Surface and Interface Analysis, Vol 2, 1980, p. 56.(7) Wittmaack, K., “Aspe
39、cts of Quantitative Secondary Ion Mass Spec-trometry,” Nuclear Instruments and Methods, Vol 168, 1980, p. 343.(8) Wilson, R.G., Stevie, F.A., and MAgee, C.W., “Secondary Ion MassSpectrometryA Practical Handbook for Depth Profiling and BulkImpurity Analysis,” John WIley http:/www.srim.org.ASTM Intern
40、ational takes no position respecting the validity of any patent rights asserted in connection with any item mentionedin this standard. Users of this standard are expressly advised that determination of the validity of any such patent rights, and the riskof infringement of such rights, are entirely t
41、heir own responsibility.This standard is subject to revision at any time by the responsible technical committee and must be reviewed every five years andif not revised, either reapproved or withdrawn. Your comments are invited either for revision of this standard or for additional standardsand shoul
42、d be addressed to ASTM International Headquarters. Your comments will receive careful consideration at a meeting of theresponsible technical committee, which you may attend. If you feel that your comments have not received a fair hearing you shouldmake your views known to the ASTM Committee on Stand
43、ards, at the address shown below.This standard is copyrighted by ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959,United States. Individual reprints (single or multiple copies) of this standard may be obtained by contacting ASTM at the aboveaddress or at 610-832-9585 (phone), 610-832-9555 (fax), or serviceastm.org (e-mail); or through the ASTM website(www.astm.org).FIG. 1 SIMS Sputter Depth Profile of Boron in SiliconE1162063
