1、 IEC 62860 Edition 1.0 2013-07 INTERNATIONAL STANDARD Test methods for the characterization of organic transistors and materials IEC 62860:2013(E)IEEE Std.1620-2008IEEE Std 1620THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2008 IEEE All rights reserved. IEEE is a registered trademark in the U.S.
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18、-2008 has been processed through IEC technical committee 113: Nanotechnology standardization for electrical and electronic products and systems, under the IEC/IEEE Dual Logo Agreement. The text of this standard is based on the following documents: IEEE Std FDIS Report on voting 1620-2008 113/184/FDI
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21、. IEC 62860:2013(E) v IEEE Std 1620-2008 Published by IEC under license from IEEE. 2008 IEEE. All rights reserved. IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials Sponsor Microprocessor Standards Committee of the IEEE Computer Society Approved 26 Septembe
22、r 2008 IEEE-SA Standards Board vi IEC 62860:2013(E) IEEE Std 1620-2008 Published by IEC under license from IEEE. 2008 IEEE. All rights reserved. Abstract: Recommended methods and standardized reporting practices for electrical characterization of printed and organic transistors are covered. Due to t
23、he nature of printed and organic electronics, significant measurement errors can be introduced if the electrical characterization design-of-experiment is not properly addressed. This standard describes the most common sources of measurement error, particularly for high-impedance electrical measureme
24、nts commonly required for printed and organic transistors. This standard also gives recommended practices in order to minimize and/or characterize the effect of measurement artifacts and other sources of error encountered while measuring printed and organic transistors. Keywords: electrical characte
25、rization, FET, flexible electronics, high impedance, nanocomposite, nanotechnology, OFET, organic electronics, organic transistor, printed electronics, printing, transistor IEC 62860:2013(E) vii IEEE Std 1620-2008 Published by IEC under license from IEEE. 2008 IEEE. All rights reserved. IEEE Introdu
26、ction This introduction is not part of IEEE Std 1620-2008, IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials. This standard covers recommended methods and standardized reporting practices for electrical characterization of organic transistors. Due to the na
27、ture of organic transistors, significant measurement errors can be introduced if not properly addressed. This standard describes the most common sources of measurement error and gives recommended practices in order to minimize and/or characterize the effect of each. Standard reporting practices are
28、included in order to minimize confusion in analyzing reported data. Disclosure of environmental conditions and sample size are included so that results can be appropriately assessed by the research community. These reporting practices also support repeatability of results so that new discoveries may
29、 be confirmed more efficiently. The practices in this standard were compiled from research and industry organizations developing organic transistor devices, materials, and manufacturing techniques. These practices were based on standard operating procedures utilized in laboratories worldwide. This s
30、tandard was initiated in 2002 to facilitate the evolution of organic transistors from the laboratory into a sustainable industry. Standardized characterization methods and reporting practices create a means of effective comparison of information and a foundation for manufacturing readiness. Notice t
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41、is standard are expressly advised that determination of the validity of any patent rights, and the risk of infringement of such rights, is entirely their own responsibility. Further information may be obtained from the IEEE Standards Association. IEC 62860:2013(E) 1 IEEE Std 1620-2008 Published by I
42、EC under license from IEEE. 2008 IEEE. All rights reserved. Test Methods for the Characterization of Organic Transistors and Materials IMPORTANT NOTICE: This standard is not intended to assure safety, security, health, or environmental protection in all circumstances. Implementers of the standard ar
43、e responsible for determining appropriate safety, security, environmental, and health practices or regulatory requirements. This IEEE document is made available for use subject to important notices and legal disclaimers. These notices and disclaimers appear in all publications containing this docume
44、nt and may be found under the heading “Important Notice” or “Important Notices and Disclaimers Concerning IEEE Documents.” They can also be obtained on request from IEEE or viewed at http:/standards.ieee.org/IPR/ disclaimers.html. 1. Overview 1.1 Scope This standard describes a method for characteri
45、zing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization. 1.2 Purpose The purpose of this standard is to provide a method for systematically characterizing organic transistors. These standards are intended to max
46、imize reproducibility of published results by providing a framework for testing organic devices, whose unique properties cause measurement issues not typically encountered with inorganic devices. This standard stresses disclosure of the procedures used to measure data and extract parameters so that
47、data quality may be easily assessed. This standard also sets guidelines for reporting data, so that information is clear and consistent throughout the research community and industry. 2 IEC 62860:2013(E) IEEE Std 1620-2008 Published by IEC under license from IEEE. 2008 IEEE. All rights reserved. 1.3
48、 Electrical characterization overview 1.3.1 Testing apparatus Testing is performed using an electronic device test system with measurement sensitivity sufficient to give an accuracy of at least 0.1% (minimum sensitivity at or better than three orders of magnitude below expected signal level). For ex
49、ample, the smallest current through an organic transistor is often the gate leakage current. If gate leakage is approximately 1 pA (10g23712A), the instrument shall have a resolution of 1 fA (10g23715g36g12g3 g82g85g3 g86g80g68g79g79g72g85g17g3 g36g71g71g76g87g76g82g81g68g79g79g92g15g3 g71g88g72g3 g87g82g3 g87g75g72g3 g79g68g85g74g72g3 g11g33g20g3 g42g159g12g3 g76g80g83g72g71g68g81g70g72g86g3 g72g81g70g82g88g81g87g72g85g72g71g3 g76g81g3 g82g85g74g68g81g76g70g3devices, the input impedance of all elements of the test system shall be at l