1、 IEC 62047-16 Edition 1.0 2015-03 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods Dispositifs semiconducteurs Dispositifs mic
2、rolectromcaniques Partie 16: Mthodes dessai pour dterminer les contraintes rsiduelles des films de MEMS Mthodes de la courbure de la plaquette et de dviation de poutre en porte-faux IEC 62047-16:2015-03(en-fr) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2015 IEC, Geneva, Switzerl
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20、avez des questions contactez-nous: csciec.ch. IEC 62047-16 Edition 1.0 2015-03 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection method
21、s Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 16: Mthodes dessai pour dterminer les contraintes rsiduelles des films de MEMS Mthodes de la courbure de la plaquette et de dviation de poutre en porte-faux INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INT
22、ERNATIONALE ICS 31.080.99 ISBN 978-2-8322-2294-2 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer
23、que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 62047-16:2015 IEC 2015 CONTENTS FOREWORD . 3 1 Scope 5 2 Normative references 5 3 Terms and definitions 5 4 Testing methods 6 4.1 General . 6 4.2 Wafer curvature method 6 4.2.1 General . 6 4.2.2 Test apparatus 7 4.2.
24、3 Measurement procedures 7 4.2.4 Reports 7 4.3 Cantilever beam deflection method . 8 4.3.1 General . 8 4.3.2 Test apparatus 9 4.3.3 Measurement procedures 9 4.3.4 Reports 9 Bibliography 11 Figure 1 Schematic drawing of compressive residual stress induced curvature after depositing thin film on subst
25、rate 6 Figure 2 Scheme for comprehensive residual stress induced curvature 9 Table 1 Mandatory details for the test of wafer curvature method . 8 Table 2 Mandatory details for the report of beam deflection method . 10 IEC 62047-16:2015 IEC 2015 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDU
26、CTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam deflection methods FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all nat
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37、identifying any or all such patent rights. International Standard IEC 62047-16 has been prepared by subcommittee 47F: Micro- electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/209/F
38、DIS 47F/214/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 IEC 62047-16:2015 IEC 2015 A list of all parts in the IEC 62047 s
39、eries, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“
40、in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for th
41、e correct understanding of its contents. Users should therefore print this document using a colour printer. IEC 62047-16:2015 IEC 2015 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 16: Test methods for determining residual stresses of MEMS films Wafer curvature and cantilever beam def
42、lection methods 1 Scope This part of IEC 62047 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 m to 10 m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods. The films should be deposited onto a substrate of
43、known mechanical properties of Youngs modulus and Poissons ratio. These methods are used to determine the residual stresses within thin films deposited on substrate 1 1 . 2 Normative references The following documents, in whole or in part, are normatively referenced in this document and are indispen
44、sable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-21, Semiconductor devices Micro-electromechanical devices Part 21: Test method for Poissons ratio of th
45、in film MEMS materials 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 residual stress fstress that remains after the original cause of the stresses (external forces, heat source) has been removed 3.2 curvature amount by which a geometric obj
46、ect deviates from being flat Note 1 to entry: In case of a circle, = 1/R where R is the radius. 3.3 body object with mass, not only energy, that is three dimensional (extended in 3-dimensions of space), has a trajectory of position and orientation in space, and is lasting for some duration of time _
47、 1Numbers in square brackets refer to the Bibliography. 6 IEC 62047-16:2015 IEC 2015 4 Testing methods 4.1 General The deposition of a film shall make the bi-layer structure to bend together due to residual stresses in the film. The amount of deflection is directly related to the residual stresses o
48、f the film. There are two kinds of test methods such as wafer curvature method and cantilever beam deflection method in order to measure the residual stress. In the case of tensile residual stress, the substrate bonded to the film becomes concave, whereas for a compressive residual stress, it become
49、s convex. 4.2 Wafer curvature method 4.2.1 General Wafer curvature method should be used in a wafer level processing. A wafer should be biaxial symmetric and stress free. Stoney 2 used a bi-layer plate system composed of a stress bearing thin film, of uniform thickness h f , deposited on a relatively thick substrate, of uniform thickness h s , and derived
