1、 IEC 62047-12 Edition 1.0 2011-09 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures Dispositifs semiconducteurs Dispositifs microlectromcaniques
2、Partie 12: Mthode dessai de fatigue en flexion des matriaux en couche mince utilisant les vibrations la rsonance des structures systmes microlectromcaniques (MEMS) IEC 62047-12:2011 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2011 IEC, Geneva, Switzerland All rights reserved. Unless otherwise
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17、NTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 12: Mthode dessai de fatigue
18、 en flexion des matriaux en couche mince utilisant les vibrations la rsonance des structures systmes microlectromcaniques (MEMS) INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE U ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-88912-689-7 Registered trademark of th
19、e International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 62047-12 IEC:2011 CONTENTS FOREWORD . 4 1 Scope . 6 2 Normative references . 6 3 Terms and definitions . 6 4 Test equipment . 7 4.1 General . 7 4.2 Actuator 8 4.3 Sensor 8 4.4 Controller 8 4.5
20、 Recorder . 9 4.6 Parallel testing 9 5 Specimen . 9 5.1 General . 9 5.2 Resonant properties 9 5.3 Test part 9 5.4 Specimen fabrication . 9 6 Test conditions . 9 6.1 Test amplitude. 9 6.2 Load ratio 10 6.3 Vibration frequency . 10 6.4 Waveform 10 6.5 Test time . 10 6.6 Test environment. 10 7 Initial
21、measurement 10 7.1 Reference strength measurement 10 7.2 Frequency response test . 11 8 Test 11 8.1 General . 11 8.2 Initial load application 11 8.3 Monitoring . 12 8.4 Counting the number of cycles 12 8.5 End of the test . 12 8.6 Recorded data . 12 9 Test report 12 Annex A (informative) Example of
22、testing using an electrostatic device with an integrated actuation component and displacement detection component . 14 Annex B (informative) Example of testing using an external drive and a device with an integrated strain gauge for detecting displacement . 17 Annex C (informative) Example of electr
23、omagnetic drive out-of-plane vibration test (external drive vibration test) 20 Annex D (informative) Theoretical expression on fatigue life of brittle materials based on Paris law and Weibull distribution 23 Annex E (informative) Analysis examples. 27 Bibliography 29 62047-12 IEC:2011 3 Figure 1 Blo
24、ck diagram of the test method . 7 Figure A.1 Microscope image of the specimen . 14 Figure A.2 Block diagram of test equipment . 15 Figure B.1 The specimens structure 17 Figure B.2 Block diagram of test equipment . 18 Figure C.1 Specimen for out-of-plane vibration testing . 20 Figure C.2 Block diagra
25、m of test equipment . 21 Figure E.1 Example of fatigue test results for silicon materials . 27 Figure E.2 Static strength and fatigue life of polysilicon plotted in 3D . 28 4 62047-12 IEC:2011 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 12:
26、Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object
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36、ndispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62
37、047-12 has been prepared by subcommittee 47F: Micro- electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/80/FDIS 47F/90/RVD Full information on the voting for the approval of this st
38、andard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 62047-12 IEC:2011 5 A list of all parts of IEC 62047 series, under the general title Semiconductor devices Microelectromechanical devices, ca
39、n be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed
40、, withdrawn, replaced by a revised edition, or amended. 6 62047-12 IEC:2011 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 12: Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures 1 Scope This part of IEC 62047 specifies a method for bending f
41、atigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 m to 1 000 m in the plane direction and from 1 m to 100 m in thickness, and test materials me
42、asuring under 1 mm in length, under 1 mm in width, and between 0,1 m and 10 m in thickness. The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-me
43、chanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 10 12 ) loadings needs to be
44、established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration. 2 Normative references The following referenced documents are indispensable for
45、 the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 62047-3:2006, Semiconductor devices Micro-electromechanical devices Part 3: Thin film standard test p
46、iece for tensile testing ISO 12107, Metallic materials Fatigue testing Statistical planning and analysis of data 3 Terms and definitions For the purposes of this document the following terms and definitions apply 3.1 amplitude one-half the algebraic difference between the maximum value and minimum v
47、alue in a loading cycle 3.2 load ratio algebraic ratio of the maximum value and minimum value of the load of a cycle 3.3 S-N curve plot of stress or strain (S) against the number of cycles (N) to failure 62047-12 IEC:2011 7 3.4 reference strength: static strength or instantaneous failure strength 3.
48、5 instantaneous failure strength failure strength of quasi-static test or resonant vibration test at rapid amplitude growth Key 1 Specimen 2 Test part 3 Actuator 4 Sensor 5 Controller 6 Recorder 7 Force 8 Displacement or strain 9 Amplitude and frequency Figure 1 Block diagram of the test method 4 Te
49、st equipment 4.1 General The test equipment shall be capable of generating resonant vibration with constant amplitude and stable frequency to the test structure. A block diagram of the test equipment is shown in Figure 1. The test equipment consists of an actuator for oscillation, a sensor for amplitude detection, a controller for maintaining the resonant vib
