1、 IEC 62047-11 Edition 1.0 2013-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems Dispositifs semiconducteurs Dispositifs
2、 microlectromcaniques Partie 11: Mthode dessai pour les coefficients de dilatation thermique linaire des matriaux autonomes pour systmes microlectromcaniques IEC62047-11:2013 colourinsideTHIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2013 IEC, Geneva, Switzerland All rights reserved. Unless other
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16、.ch/csc Si vous dsirez nous donner des commentaires sur cette publication ou si vous avez des questions contactez-nous: csciec.ch. IEC 62047-11 Edition 1.0 2013-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 11: Test method for coefficients
17、of linear thermal expansion of free-standing materials for micro-electromechanical systems Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 11: Mthode dessai pour les coefficients de dilatation thermique linaire des matriaux autonomes pour systmes microlectromcaniques INTERNATIONA
18、L ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE R ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-8322-0965-3 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtaine
19、d this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colourinside 2 62047-11 IEC:2013 CONTENTS FOREWORD . 3 1 Scope . 5 2 Normative References 5 3 Symbols and designations 5 4 Test piece 6 4.1 General . 6
20、4.2 Shape of test piece . 6 4.3 Test piece thickness 6 4.4 In-plane type test piece . 7 4.5 Out-of-plane type test piece 7 5 Testing method and test apparatus . 7 5.1 Measurement principle 7 5.1.1 General . 7 5.1.2 In-plane method 8 5.1.3 Out-of-plane method 8 5.2 Test apparatus 9 5.2.1 General . 9
21、5.2.2 In-plane method 9 5.2.3 Out-of-plane method 9 5.3 Temperature measurement 9 5.4 In-plane test piece handling . 9 5.5 Thermal strain measurement . 10 5.6 Heating speed . 10 5.7 Data analysis 10 5.7.1 General . 10 5.7.2 Terminal-based calculation 10 5.7.3 Slope calculation by linear least square
22、s method . 10 6 Test report 10 Annex A (informative) Test piece fabrication 12 Annex B (informative) Test piece handling example . 13 Annex C (informative) Test piece releasing process . 14 Annex D (informative) Out-of-plane test setup and test piece example . 15 Annex E (informative) Data analysis
23、example in in-plane test method 16 Annex F (informative) Data analysis example in out-of-plane test method 17 Bibliography 19 Figure 1 Thin film test piece . 6 Figure 2 CLTE measurement principles 8 Figure A.1 Schematic test piece fabrication process 12 Figure B.1 Auxiliary jigs and a specimen examp
24、le 13 Figure C.1 Schematic illustration showing the test piece releasing process . 14 Figure D.1 Example of test setup and test piece 15 Figure E.1 Example of CLTE measurement with an aluminium test piece . 16 Figure F.1 Example of CLTE measurement with a gold test piece 18 Table 1 Symbols and desig
25、nations . 5 62047-11 IEC:2013 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 11: Test method for coefficients of linear thermal expansion of free-standing materials for micro-electromechanical systems FOREWORD 1) The International Electrotech
26、nical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To thi
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35、 Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC
36、 Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-11 has been prepared by subcommittee 47F: Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices. The tex
37、t of this standard is based on the following documents: FDIS Report on voting 47F/154/FDIS 47F/161/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC
38、Directives, Part 2. A list of all parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on the IEC website. 4 62047-11 IEC:2013 The committee has decided that the contents of this publication will remain unchanged until t
39、he stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publicati
40、on indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 62047-11 IEC:2013 5 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 11: Test method for coefficients of
41、 linear thermal expansion of free-standing materials for micro-electromechanical systems 1 Scope This part of IEC 62047 specifies the test method to measure the linear thermal expansion coefficients (CLTE) of thin free-standing solid (metallic, ceramic, polymeric etc.) micro-electro-mechanical syste
42、m (MEMS) materials with length between 0,1 mm and 1 mm and width between 10 m and 1 mm and thickness between 0,1 m and 1 mm, which are main structural materials used for MEMS, micromachines and others. This test method is applicable for the CLTE measurement in the temperature range from room tempera
43、ture to 30 % of a materials melting temperature. 2 Normative References The following documents, in whole or in part, are normatively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest editio
44、n of the referenced document (including any amendments) applies. IEC 62047-3, Semiconductor devices Micro-electromechanical devices Part 3: Thin film standard test piece for tensile-testing 3 Symbols and designations Symbols and corresponding designations are given in Table 1. Table 1 Symbols and de
45、signations Symbol Unit Designation g m Gauge length L0m Initial length of a test piece LTm Length of a test piece at temperature T T C Temperature t m Thickness of a test piece w m Width of a test piece av1/C Average coefficient of thermal expansion of a test piece S1/C Average coefficient of therma
46、l expansion of a substrate Tm Thermal deformation T1 Thermal strain 6 62047-11 IEC:2013 4 Test piece 4.1 General The test piece shall be prepared in accordance with the IEC 62047-3. It should be fabricated through the same processes used for the device where the thin film is applied. It should have
47、dimensions in the same order of that of the objective device component in order to minimize the size effect. There are many fabrication methods depending on the applications. A typical test piece fabrication method based on MEMS processes is shown in Annex A. 4.2 Shape of test piece The dimensions o
48、f a test piece, such as thickness (t), width (w), and initial length (L0), in Figure 1 should be designed to be the same order of the device. The dimensions shall be specified within the accuracy range of 1 % of the corresponding length scale. The cross sections along the line A-A are indicated as c
49、ross-hatching in Figure 1. The gauge length in Figure 1 shall be measured from centre to centre of the gauge marks. a B B A A 1 1 4 5 3 2 A-A g t 5 w IEC 1703/13 Key 1 holes for die fixing, tying a yarn or wire for the weight hanging 2 free-standing test piece 3 gauge marks to define a gauge length 4 substrate to accommodate a test piece 5 portions to be separated before tes
