1、 IEC 61788-15 Edition 1.0 2011-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Superconductivity Part 15: Electronic characteristic measurements Intrinsic surface impedance of superconductor films at microwave frequencies Supraconductivit Partie 15: Mesures de caractristiques lectroniques Impdance de
2、 surface intrinsque de films supraconducteurs aux frquences micro-ondes IEC61788-15:2011 colourinsideTHIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2011 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
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16、 des commentaires sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 61788-15 Edition 1.0 2011-10 INTERNATIONAL STANDARD NORME INTERNATIONALE Superconductivity Part 15: Electronic
17、characteristic measurements Intrinsic surface impedance of superconductor films at microwave frequencies Supraconductivit Partie 15: Mesures de caractristiques lectroniques Impdance de surface intrinsque de films supraconducteurs aux frquences micro-ondes INTERNATIONAL ELECTROTECHNICAL COMMISSION CO
18、MMISSION ELECTROTECHNIQUE INTERNATIONALE X ICS 29.050 PRICE CODE CODE PRIX ISBN 978-2-88912-710-8 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale colourinside 2 61788-15 IEC:2011 CONTENTS FOREWORD . 4 INTRODUCTION .
19、6 1 Scope . 7 2 Normative references . 7 3 Terms and definitions . 7 4 Requirements . 8 5 Apparatus . 9 5.1 Measurement equipment . 9 5.2 Measurement apparatus 9 5.3 Dielectric rods . 13 5.4 Superconductor films and copper cavity 14 6 Measurement procedure . 14 6.1 Set-up . 14 6.2 Measurement of the
20、 reference level. 14 6.3 Measurement of the RSof oxygen-free high purity copper . 14 6.4 Determination of the effective RSof superconductor films and tan of standard dielectric rods . 17 6.5 Determination of the penetration depth 18 6.6 Determination of the intrinsic surface impedance . 20 7 Uncerta
21、inty of the test method 21 7.1 Measurement of unloaded quality factor 21 7.2 Measurement of loss tangent. 21 7.3 Temperature 22 7.4 Specimen and holder support structure . 22 8 Test Report 22 8.1 Identification of test specimen . 22 8.2 Report of the intrinsic ZSvalues 22 8.3 Report of the test cond
22、itions 22 Annex A (informative) Additional information relating to clauses 1 to 8 . 24 Annex B (informative) Uncertainty considerations 41 Bibliography 45 Figure 1 Schematic diagram for the measurement equipment for the intrinsic ZSof HTS films at cryogenic temperatures 10 Figure 2 Schematic diagram
23、 of a dielectric resonator with a switch for thermal connection 10 Figure 3 Typical dielectric resonator with a movable top plate 11 Figure 4 Switch block for thermal connection . 12 Figure 5 Dielectric resonator assembled with a switch block for thermal connection . 13 Figure 6 A typical resonance
24、peak. Insertion attenuation IA, resonant frequency f0 and half power bandwidth f3dBare defined 16 Figure 7 Reflection scattering parameters S11and S2218 Figure 8 Definitions for terms in Table 5 22 Figure A.1 Schematic diagram for the measurement system 24 Figure A.2 A motion stage using step motors
25、 . 25 61788-15 IEC:2011 3 Figure A.3 Cross-sectional view of a dielectric resonator . 26 Figure A.4 A diagram for simplied cross-sectional view of a dielectric resonator 30 Figure A.5 Mode chart for a sapphire resonator . 33 Figure A.6 Frequency response of the sapphire resonator 34 Figure A.7 QUver
26、sus temperature for the TE021and the TE012modes of the sapphire resonator with 360 nm-thick YBCO films . 35 Figure A.8 The resonant frequency f0 versus temperature for the TE021and TE012modes of the sapphire resonator with 360 nm-thick YBCO films 35 Figure A.9 The temperature dependence of the RSeof
27、 YBCO films with the thicknesses of 70 nm to 360 nm measured at 40 GHz . 36 Figure A.10 The temperature dependence of efor the YBCO films with the thicknesses of 70 nm and 360 nm measured at 40 GHz 36 Figure A.11 The penetration depths of the 360 nm-thick YBCO film measured at 10 kHz by using the mu
28、tual inductance method and at 40 GHz by using sapphire resonator 37 Figure A.12 The temperature dependence of the intrinsic surface resistance RSof YBCO films with the thicknesses of 70 nm to 360 nm measured at 40 GHz . 37 Figure A.13 Comparison of the temperature-dependent value of each term in Equ
29、ation (A.35) for the TE021mode of the standard sapphire resonator 38 Figure A.14 Comparison of the temperature-dependent value of each term in Equation (A.35) for the TE012mode of the standard sapphire resonator 38 Figure A.15 Temperature dependence of uncertainty in the measured intrinsic RSof YBCO
30、 films . 39 Table 1 Typical dimensions of a sapphire rod 14 Table 2 Typical dimensions of OFHC cavities and HTS films 14 Table 3 Geometrical factors and filling factors calculated for the standard sapphire resonator 17 Table 4 Specifications of vector network analyzer 21 Table 5 Type B uncertainty f
31、or the specifications on the sapphire rod 21 Table A.1 Geometrical factors and filling factors calculated for the standard sapphire resonator 31 Table B.1 Output signals from two nominally identical extensometers 42 Table B.2 Mean values of two output signals . 42 Table B.3 Experimental standard dev
32、iations of two output signals 42 Table B.4 Standard uncertainties of two output signals 42 Table B.5 Coefficient of variations of two output signals. 43 4 61788-15 IEC:2011 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SUPERCONDUCTIVITY Part 15: Electronic characteristic measurements Intrinsic surface
33、 impedance of superconductor films at microwave frequencies FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-
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43、n of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 61788-15 has been prepared by IEC technic
44、al committee 90: Superconductivity. The text of this standard is based on the following documents: FDIS Report on voting 90/280/FDIS 90/283/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has bee
45、n drafted in accordance with the ISO/IEC Directives, Part 2. 61788-15 IEC:2011 5 A list of all parts of the IEC 61788 series, published under the general title Superconductivity, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged un
46、til the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publ
47、ication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 61788-15 IEC:2011 INTRODUCTION Since the discovery of high TCsuperconductors (HTS), extensive research has
48、been performed worldwide on electronic applications and large-scale applications with HTS filter subsystems based on YBa2Cu3O7-(YBCO) having already been commercialized 11. The merits of using HTS films for microwave devices such as resonators, filters, antennas, delay lines, etc., include i) possib
49、ility of microwave losses from HTS films being extremely low and ii) no signal dispersion on transmission lines made of HTS films due to extremely low microwave surface resistance (RS) 2 and frequency-independent penetration depth () of HTS films, respectively. In this regard, when it comes to designing HTS-based microwave devices, it is
