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    IEC 60747-6-3-1993 Semiconductor devices discrete devices part 6 thyristors section 3 blank detail specification for reverse blocking triode thyristors ambient .pdf

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    IEC 60747-6-3-1993 Semiconductor devices discrete devices part 6 thyristors section 3 blank detail specification for reverse blocking triode thyristors ambient .pdf

    1、NORME CE1 INTERNATIONALE INTERNATIONAL STANDARD IEC 747-6-3 QC 7501 13 Premire dition First edition 1993-1 1 Dispositifs semiconducteurs Dispositifs discrets Partie 6: Thyristors Section trois - Spcification particulire cadre pour les thyristors triodes bloqus en inverse, temprature ambiante et de b

    2、oitier spcifie, pour courants suprieurs 1 O0 A Sem i conductor devi ces Discrete devices Part 6: Thyristors Section Three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 1 O0 A Numro de rfrence Reference number CEIAEC 747-6-3: 19

    3、93 Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Numros des publications Depuis le ler janvier 1997, les publications de la CE1 sont numrotes partir de 60000. Publications c

    4、onsolides Les versions consolides de certaines publications de la CE1 incorporant les amendements sont disponibles. Par exemple, les numros ddition 1.0, 1.1 et 1.2 indiquent respectivement la publication de base, la publication de base incorporant lamendement 1, et la publication de base incorporant

    5、 les amendements 1 et 2. Validit de la prsente publication Le contenu technique des publications de la CE1 est constamment revu par la CE1 afin quil reflte ltat actuel de la technique. Des renseignements relatifs la date de reconfir- mation de la publication sont disponibles dans le Catalogue de la

    6、CEI. Les renseignements relatifs des questions ltude et des travaux en cours entrepris par le comit technique qui a tabli cette publication, ainsi que la liste des publications tablies, se trouvent dans les documents ci- dessous: Site web de la CEI* Catalogue des publications de la CE1 Publi annuell

    7、ement et mis jour rgulirement (Catalogue en ligne) Disponible la fois au 4te web de la CEI* et comme priodique imprim Bulletin de la CE1 Terminologie, symboles graphiques et littraux En ce qui concerne la terminologie gnrale, le lecteur se reportera la CE1 60050: Vocabulaire Electro- technique inter

    8、national (VEI). Pour les symboles graphiques, les symboles littraux et les signes dusage gnral approuvs par la CEI, le lecteur consultera la CE1 60027: Symboles littraux 2 utiliser en lectrotechnique, la CE1 6041 7: Symboles graphiques utilisables sur le matriel. index, relev et compilation des feui

    9、lles individuelles. et la CE1 6061 7: Symboles graphiques pour schmas. * Voir adresse 4te web, sur la page de titre. Numbering As from 1 January 1997 all IEC publications are issued with a designation in the 60000 series. Consolidated publications Consolidated versions of some IEC publications inclu

    10、ding amendments are available. For example, edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the base publication incor- porating amendment 1 and the base publication incorporating amendments 1 and 2. Validity of this publication The technical content of IEC publication

    11、s is kept under constant review by the IEC, thus ensuring that the content reflects current technology. Information relating to the date of the reconfirmation of the publication is available in the IEC catalogue. Information on the subjects under consideration and work in progress undertaken by the

    12、technical committee which has prepared this publication, as well as the list of publications issued, is to be found at the following IEC sources: IEC web site“ Catalogue of IEC publications Published yearly with regular updates (On-line catalogue) Available both at the IEC web site* and as a printed

    13、 periodical IEC Bulletin Terminology, graphical and letter symbols For general terminology, readers are referred to I EC 60050: International Electrotechnical Vocabulary (IEV). For graphical symbols, and letter symbols and signs approved by the IEC for general use, readers are referred to publicatio

    14、ns IEC 60027: Letter symbols to be used in electrical technology, IEC 60417: Graphical symbols for use on equipment. index, survey and compilation of the single sheets and IEC 60617: Graphical symbols for diagrams. See web site address on title page. Copyright International Electrotechnical Commissi

    15、on Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NORME INTERNATIONALE INTERNATIONAL STANDARD CE1 IEC 747-6-3 QC 7501 13 Premire dition First edition 1993-1 1 Dispositifs semiconducteurs Dispositifs discrets Partie 6: Thyristo

    16、rs Section trois - Spcification particulire cadre pour les thyristors triodes bloqus en inverse, temprature ambiante et de boitier spcifie, pour courants suprieurs 1 O0 A Semiconductor devices Discrete devices Part 6: Thyristors Section Three - Blank detail specification for reverse blocking triode

    17、thyristors, ambient and case-rated, for currents greater than 1 O0 A 0 CE1 1993 Droits de reproduction rservs - Copyright - all rights reserved Aucune partie de cene publication ne peut tre reproduite ni utili any IEC National Committee interested in the subject dealt with may participate in this pr

    18、eparatory work. International, governmental and non-governmental organizations liaising with the IEC also participate in this preparation. The IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two

    19、organizations. 2) The formal decisions or agreements of the IEC on technical matters, prepared by technical committees on which all the National Committees having a special interest therein are represented, express, as nearly as possible, an international consensus of opinion on the subjects dealt w

    20、ith. 3) They have the form of recommendations for international use published in the form of standards, technical reports or guides and they are accepted by the National Committees in that sense. 4) In order to promote international unification, IEC National Committees undertake to apply IEC Interna

    21、tional Standards transparently to the maximum extent possible in their national and regional standards. Any divergence between the IEC Standard and the corresponding national or regional standard shall be clearly indicated in the latter. International Standard I EC 747-6-3 has been prepared by IEC t

    22、echnical committee 47: Semiconductor devices. This Standard is a blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 1 O0 A. The text of this standard is based on the following documents: Full information on the voting for the approval

    23、 of this standard can be found in the report on voting indicated in the above table. The QC number that appears on the front cover of this publication is the specification number in the IEC Quality Assessment System for Electronic Components (IECQ). . Other IEC publications quoted in this standard:

    24、Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4- 747-6-3 O CEI:1993 Autres publications de la GEI cites dans la prsente norme: Publications nos 68-2-1 7: 1978, Essais denvir

    25、onnement - Deuxime partie: Essais - Essai O: Etanchit Amendement no 4 (1991) 191 -2: 1966, Normalisation mcanique des dispositifs semiconducteurs - Deuxime partie: Dimensions (en rvision) 747-6: 1983, Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Sixime partie: Thyristors A

    26、mendement no 1 (1991) 747-10: 1991. Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Dixime partie: Spcification gnrique pour les dispositifs discrets et les circuits intgrs 747-1 1 : 1985, Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Onzime partie:

    27、Spcification intermdiaire pour les dispositifs discrets Amendement no 1 (1991) 749: 1984, Dispositifs semiconducteurs - Essais mcaniques et climatiques Amendement no 1 (1991) Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or ne

    28、tworking permitted without license from IHS-,-,-747-6-3 O IEC: 1993 -5- Other IEC publications quoted in this standard: Publications Nos. 68-2-17: 1978, Environmental testing - Part 2: Tests - Test Q: Sealing Amendment No. 4 (1991) 191 -2: 1966, Mechanical standardization of semiconductor devices -

    29、Part 2: Dimensions (under revision) 747-6: 1983, Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors Amendment No. 1 (1991) 747-10: 1991, Semiconductor devices - Discrete devices and integrated circuits - Part 10: Generic specification for discrete devices and integ

    30、rated circuits 747-1 1: 1985, Semiconductor devices - Discrete devices and integrated circuits - Part 11: Sectional specification for discrete devices Amendment No. 1 (1991) 749: 1984. Semiconductor devices - Mechanical and climatic test methods Amendment No. 1 (1991) Copyright International Electro

    31、technical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-6- 747-6-3 O CEI:1993 DISPOSITIFS SEMICONDUCTEURS Dispositifs discrets Partie 6: Thyristors Section trois - Spcification particulire cadre pour les thyristors

    32、 triodes bloqus en inverse, temprature ambiante et de botier spcifie, pour courants suprieurs 100 A INTRODUCTION Le Systme CE1 dassurance de la qualit des composants lectroniques fonctionne conformment aux statuts de la CE1 et sous son autorit. Le but de ce systme est de dfinir les procdures dassura

    33、nce de la qualit de telle faon que les composants lectroniques livrs par un pays participant comme tant conformes aux exigences dune spcification applicable soient galement acceptables dans tous les autres pays participants sans ncessiter dautres essais. Cette spcification particulire cadre fait par

    34、tie dune srie de spcifications particulires cadres concernant les dispositifs semiconducteurs; elle doit tre utilise avec les publicat ions su ivantes : CE1 747-1 O/QC 700000: Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Dixime partie: Spcification gnrique pour les disposi

    35、tifs discrets et les cir- cuits intgrs CE1 747-1 1 /QC 7501 00: Dispositifs semiconducteurs - Dispositifs discrets et circuits intgrs - Onzime partie: Spcification intermdiaire pour les dispositifs discrets Renseignements ncessaires Les nombres indiqus entre crochets sur cette page et les pages suiv

    36、antes correspondent aux indications suivantes qui doivent tre portes dans les cases prvues cet effet. Identification de la spcification particulire l Nom de lOrganisme National de Normalisation sous lautorit duquel la spcifi- cation particulire est tablie. 2 Numro IECQ de la spcification particulire

    37、. 3 Numros de rfrence et ddition des spcifications gnrique et intermdiaire. 4 Numro national de la spcification particulire, date ddition et toute autre infor- mation requise par le systme national. Identification du composant 5 Type de composant. 6 Renseignements sur la construction et les applicat

    38、ions type. Si un dispositif peut avoir plusieurs applications, cela doit tre indiqu dans la spcification particulire. Les caractristiques, les limites et les exigences de contrle relatives ces applications doivent tre respectes. Pour les dispositifs sensibles aux charges lectrostatiques, ou contenan

    39、t des matriaux instables, par exemple de loxyde de bryllium, les precautions observer doivent tre ajoutes dans la spcification particulire. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license

    40、from IHS-,-,-747-6-3 O IEC: 1 993 -7- SEMICONDUCTOR DEVICES Discrete devices Part 6: Thyristors Section Three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents greater than 100 A INTRODUCTION The IEC Quality Assessment System for Electronic Com

    41、ponents is operated in conformance with the statutes of the IEC and under the authority of the IEC. The object of this system is to define quality assessment procedures in such a manner that electronic components released by one participating country as conforming with the requirements of an applica

    42、ble specification are equally acceptable in all other participating countries without the need for further testing. This blank detail specification is one of a series of blank detail specifications for semi- conductor devices and should be used with the following publications: IEC 747-1 O/QC 700000:

    43、 Semiconductor devices - Discrete devices and integrated circuits - Part 1 O: Generic specification for discrete devices and integrated circuits IEC 747-1 1/QC 750100: Semiconductor devices - Discrete devices and integrated circuits - Part 1 1: Sectional specification for discrete devices Required I

    44、nformation Numbers shown in square brackets on this and the following pages correspond to the fol- lowing items of required information, which should be entered in the spaces provided. Identification of the detail specification l The name of the National Standards Organization under whose authority

    45、the detail specification is issued. 2 The IECQ number of the detail specification. 3 The numbers and issue numbers of the generic and sectional specifications. 4 The national number of the detail specification, date of issue and any further information required by the national system. Identification

    46、 of the component 5 Type of component. 6 Information on typical construction and applications. If a device is designed to satisfy several applications, this should be stated in the detail specification. Characteristics, limits and inspection requirements for these applications shall be met. If a dev

    47、ice is electrostatic sensitive, or contains hazardous material, e.g. beryllium oxide, a caution statement should be added in the detail specification. Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted witho

    48、ut license from IHS-,-,-8- 747-6-3 O CEI:1993 (71 Dessin dencombrement etiou rfrence aux normes correspondantes pour les encombrements. 8 Catgorie dassurance de la qualit. 9 Donnes de rfrence sur les proprits les plus importantes pour permettre la comparaison des types de composants entre eux. Dans toute cette norme, les textes indiqus entre crochets sont destins guider le rdacteur de la spcification; ils ne doivent pas figurer dans la spcification


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