1、 IEC 62830-1 Edition 1.0 2017-03 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Semiconductor devices for energy harvesting and generation Part 1: Vibration based piezoelectric energy harvesting Dispositifs semiconducteurs Dispositifs semiconducteurs pour rcupration et production
2、dnergie Partie 1: Rcupration dnergie pizolectrique base sur des vibrations IEC 62830-1:2017-03(en-fr) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2017 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utiliz
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20、Semiconductor devices for energy harvesting and generation Part 1: Vibration based piezoelectric energy harvesting Dispositifs semiconducteurs Dispositifs semiconducteurs pour rcupration et production dnergie Partie 1: Rcupration dnergie pizolectrique base sur des vibrations INTERNATIONAL ELECTROTEC
21、HNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.99 ISBN 978-2-8322-0000-0 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authoriz
22、ed distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 62830-1:2017 IEC 2017 CONTENTS FOREWORD . 4 1 Scope 6 2 Normative references 6 3 Terms and definitions 6 3.1 General terms . 6 3.2 Piezoelectric transducer 8 3.3 Chara
23、cteristic parameters . 9 4 Essential ratings and characteristic parameters . 11 4.1 Identification and type . 11 4.2 Limiting values and operating conditions . 11 4.3 Additional information . 11 5 Test method 12 5.1 General . 12 5.2 Electrical characteristics . 13 5.2.1 Test procedure 13 5.2.2 Capac
24、itance 14 5.2.3 Resonant frequency . 14 5.2.4 Bandwidth 15 5.2.5 Open circuit voltage . 15 5.2.6 Output voltage . 15 5.2.7 Output current . 16 5.2.8 Output power . 16 5.2.9 Optimal load impedance 17 5.2.10 Maximum output power 17 5.2.11 Settling time 17 5.3 Mechanical characteristics 18 5.3.1 Test p
25、rocedure 18 5.3.2 Temperature range 19 5.3.3 Relative humidity range . 19 5.3.4 Input vibration 20 Annex A (informative) Piezoelectric mode 21 A.1 d 33mode 21 A.2 d 31mode 21 Bibliography 22 Figure 1 A vibration based energy harvester using cantilever with piezoelectric film 7 Figure 2 Conceptual di
26、agram of a vibration based piezoelectric energy harvester . 8 Figure 3 Equivalent circuit of a vibration based piezoelectric energy harvester 10 Figure 4 Measurement procedure of vibration based piezoelectric energy harvesters . 13 Figure 5 Test setup for the electrical characteristics of a vibratio
27、n based piezoelectric energy harvester . 14 Figure 6 Frequency response of a vibration based piezoelectric energy harvester 15 Figure 7 Output voltage of a vibration based piezoelectric energy harvester at various external loads . 16 Figure 8 Output current of a vibration based piezoelectric energy
28、harvester at various output voltages . 16 IEC 62830-1:2017 IEC 2017 3 Figure 9 Output power of a vibration based piezoelectric energy harvester at various external loads . 17 Figure 10 Output power and output voltage of a vibration based piezoelectric energy harvester at various input vibrations 17
29、Figure 11 Transient response of output voltage of a vibration based piezoelectric energy harvester to excitation . 18 Figure 12 Block diagram of a test setup for evaluating the reliability of a vibration based piezoelectric energy harvester 19 Figure A.1 Piezoelectric mode of vibrating beam based en
30、ergy harvester 21 Table 1 Specification parameters for vibration based piezoelectric energy harvesters . 11 4 IEC 62830-1:2017 IEC 2017 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES FOR ENERGY HARVESTING AND GENERATION Part 1: Vibration based piezoelectric e
31、nergy harvesting FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all questions concerning stand
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41、wn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62830-1 has been prepared by IEC technical committee 47: Semiconductor devices. The
42、 text of this standard is based on the following documents: FDIS Report on voting 47/2341/FDIS 47/2366/RVD Full information on the voting for the approval of this International Standard can be found in the report on voting indicated in the above table. This document has been drafted in accordance wi
43、th the ISO/IEC Directives, Part 2. IEC 62830-1:2017 IEC 2017 5 A list of all parts in the IEC 62830 series, published under the general title Semiconductor devices Semiconductor devices for energy harvesting and generation, can be found on the IEC website. The committee has decided that the contents
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45、logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 IEC 62830-1:2017 IEC 2017 SEMICONDUCTOR DEVICES SEMICONDUCTOR DEVICES FO
46、R ENERGY HARVESTING AND GENERATION Part 1: Vibration based piezoelectric energy harvesting 1 Scope This part of IEC 62830 defines terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of vibration based piezoelectric
47、energy harvesting devices for practical use. This document is applicable to energy harvesting devices for consumer, general industries, military and aerospace applications without any limitations on device technology and size. 2 Normative references The following documents are referred to in the tex
48、t in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-5:2003, Semiconductor devices Mechani
49、cal and climatic test methods Part 5: Steady-state temperature humidity bias life test IEC 60749-12:2002, Semiconductor devices Mechanical and climatic test methods Part 12: Vibration, variable frequency 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in s
