1、 IEC 62615 Edition 1.0 2010-05 INTERNATIONAL STANDARD NORME INTERNATIONALE Electrostatic discharge sensitivity testing Transmission line pulse (TLP) Component level Essai de sensibilit aux dcharges lectrostatiques Impulsion de ligne de transmission (TLP) Niveau composant IEC 62615:2010 THIS PUBLICAT
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16、tez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 62615 Edition 1.0 2010-05 INTERNATIONAL STANDARD NORME INTERNATIONALE Electrostatic discharge sensitivity testing Transmission line pulse (TLP) Component level Essai de sensibilit aux dcharges lectrostatiques Impulsion de lig
17、ne de transmission (TLP) Niveau composant INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE R ICS 17.220.99; 31.080 PRICE CODE CODE PRIX ISBN 978-2-88910-976-0 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Elect
18、rotechnique Internationale 2 62615 IEC:2010 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ ELECTROSTATIC DISCHARGE SENSITIVITY TESTING TRANSMISSION LINE PULSE (TLP) COMPONENT LEVEL FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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29、ble for identifying any or all such patent rights. International Standard IEC 62615 has been prepared by IEC technical committee 47: Semiconductor devices. This first edition is based on an ANSI/ESDA document ANSI/ESD STM5.5.1-2008. The text of this standard is based on the following documents: FDIS
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32、. 4 62615 IEC:2010 INTRODUCTION Interest in TLP testing is growing rapidly in the testing of electronic components in the semiconductor industry. TLP testing techniques are being used for semiconductor process development, device and circuit design. This technique or practice is being utilized on pr
33、oducts in both wafer level and packaged environments. TLP testing is used as an electrostatic discharge (ESD) characterization tool to obtain voltage-current pulse characterization parameters, failure levels, and ESD metrics. The TLP technique is being used today as a standard measurement for ESD de
34、vices. The TLP system to the ESD engineer is becoming a tool as critical as the parameter analyzer is to the semiconductor engineer. The majority of TLP systems are designed by engineers in a laboratory environment. A number of commercial TLP systems have been marketed in the industry. Hence it is c
35、lear a TLP specification was needed for the TLP vendors, semiconductor industry and product customers to be able to make valid data comparisons. With the usage of TLP data for ESD characterization, technology benchmarking, and product quality evaluation, there is a growing need to have standard meth
36、odologies, failure criteria, and means of reporting to allow dialogue between semiconductor suppliers, vendors, and product customers. This document defines the standard test method used today in the semiconductor industry for TLP testing method and techniques in both industrial and academic institu
37、tions (this document is intended to be used by electrical technicians, electrical engineers, semiconductor process and device engineers, ESD reliability and quality engineers, and circuit designers). The context of this document is the application of TLP techniques for the electrical characterizatio
38、n of semiconductor components. These semiconductor components can be single devices, a plurality of devices, integrated circuits, or semiconductor chips. This methodology is relevant to both active and passive elements. This test method is applicable to diodes, MOSFET devices, bipolar transistors, r
39、esistors, capacitors, inductors, contacts, vias, wire interconnects, and related components. 62615 IEC:2010 5 ELECTROSTATIC DISCHARGE SENSITIVITY TESTING TRANSMISSION LINE PULSE (TLP) COMPONENT LEVEL 1 Scope and object This International Standard defines a method for pulse testing to evaluate the vo
40、ltage current response of the component under test and to consider protection design parameters for electro-static discharge (ESD) human body model (HBM). This technique is known as transmission line pulse (TLP) testing. This document establishes a methodology for both testing and reporting informat
41、ion associated with transmission line pulse (TLP) testing. The scope and focus of this document pertains to TLP testing techniques of semiconductor components. This document should not become alternative method of HBM test standard such as IEC 60749-26. The purpose of the document is to establish gu
42、idelines of TLP methods that allow the extraction of HBM ESD parameters on semiconductor devices. This document provides the standard measurement and procedure for the correct extraction of HBM ESD parameters by using TLP. 2 Normative references The following referenced documents are indispensable f
43、or the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60749-26: Semiconductor devices Mechanical and climatic test methods Part 26: Electrostatic dischar
44、ge (ESD) sensitivity testing Human body model (HBM) IEC 60749-27, Semiconductor devices Mechanical and climatic test methods Part 27: Electrostatic discharge (ESD) sensitivity testing Machine model (MM) IEC 60749-28, Semiconductor devices Mechanical and climatic test methods Part 28: Electrostatic d
45、ischarge (ESD) sensitivity testing Direct contact charged device model (DC- CDM) 13 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 current source method TLP methodology (sometimes referred to as constant current method) that utilizes a 500 res
46、istor in series with the DUT and measures the voltage and current at the DUT 3.2 destructive damage damage where the operating electrical characteristics or parameters are altered and do not recover to the initial conditions prior to stress _ 1Under consideration. 6 62615 IEC:2010 3.3 safe operation
47、 area (SOA) current and voltage regime where a device is in normal operation without degradation 3.4 second breakdown condition where a negative resistance state occurs in a device due to thermal processes NOTE This is designated as the voltage trigger point V t2and current I t2 . and is typically o
48、bserved after electrical breakdown (e.g., V t1 , I t1 ) 3.5 thermal instability condition whereby a device is in a negative resistance regime due to thermal processes 3.6 time domain reflectometer method (TDR) TLP methodology that uses an oscilloscope to measure both the incident and the reflected w
49、aves from the device under test (DUT) 3.7 time domain transmission method (TDT) TLP methodology that uses an oscilloscope to measure the transmitted wave after application to the device under test (DUT) 3.8 time domain transmission and reflection method (TDRT) TLP methodology that incorporates both the transmitted and reflected waves 3.9 transmission line pulse (TLP) a rectangular curren
