1、 IEC 60747-3 Edition 2.0 2013-07 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Part 3: Discrete devices: Signal, switching and regulator diodes Dispositifs semiconducteurs Partie 3: Dispositifs discrets: Diodes de signal, diodes de commutation et diodes rgulatrices IEC60747-3:201
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16、L STANDARD NORME INTERNATIONALESemiconductor devices Part 3: Discrete devices: Signal, switching and regulator diodes Dispositifs semiconducteurs Partie 3: Dispositifs discrets: Diodes de signal, diodes de commutation et diodes rgulatrices INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTRO
17、TECHNIQUE INTERNATIONALE VICS 31.080.10 PRICE CODECODE PRIXISBN 978-2-8322-0897-7 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor.
18、Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colourinside 2 60747-3 IEC:2013 CONTENTS FOREWORD . 4 1 Scope . 6 2 Normative references . 6 3 Terms, definitions and graphical symbols . 6 3.1 Signal and switching diodes 6 3.2 Voltage reference diodes
19、and voltage regulator diodes 7 3.3 Current-regulator diodes 8 4 Letter symbols 9 4.1 General . 9 4.2 Signal and switching diodes 9 4.2.1 Subscripts . 9 4.2.2 List of letter symbols 9 4.3 Voltage reference diodes and voltage regulator diodes 10 4.3.1 Subscripts . 10 4.3.2 List of letter symbols 10 4.
20、4 Current-regulator diodes 10 4.4.1 Subscripts . 10 4.4.2 List of letter symbols 11 5 Essential ratings and characteristics . 11 5.1 General . 11 5.2 Signal and switching diodes 11 5.2.1 Ratings (limiting values) 11 5.2.2 Characteristics 11 5.3 Voltage reference diodes and voltage regulator diodes 1
21、4 5.3.1 Ratings (limiting values) 14 5.3.2 Characteristics 14 5.4 Current-regulator diodes 16 5.4.1 Ratings (limiting values) 16 5.4.2 Characteristics 16 6 Measuring methods 17 6.1 General . 17 6.2 Signal and switching diodes 17 6.2.1 Reverse current IR17 6.2.2 Forward voltage VF. 17 6.2.3 Total cap
22、acitance Ctot. 18 6.2.4 Forward recovery time tfrand peak forward recovery voltage VFRM19 6.2.5 Reverse recovery time (trr) and recovered charge (Qr) 20 6.2.6 Detector voltage efficiency v21 6.2.7 Detector power efficiency p. 22 6.2.8 Noise Vn, In. 23 6.3 Voltage reference diodes and voltage regulat
23、or diodes 24 6.3.1 Working voltage VZ. 24 6.3.2 Differential resistance in the working current range rz25 6.3.3 Temperature coefficient of working voltage vz. 25 6.3.4 Reverse current IR26 6.3.5 Forward voltage VF. 26 60747-3 IEC:2013 3 6.3.6 Junction capacitance Ctot26 6.3.7 Noise voltage Vn. 26 6.
24、4 Current-regulator diodes 27 6.4.1 Regulator current IS27 6.4.2 Temperature coefficient of regulator current IS27 6.4.3 Regulator current variation IS28 6.4.4 Limiting voltage VL28 6.4.5 Small-signal regulator conductance gs29 6.4.6 Knee conductance gk31 7 Acceptance and reliability . 31 7.1 Accept
25、ance-defining characteristics 31 7.2 Electrical endurance tests . 33 Figure 1 Current-regulator diode graphical symbol . 8 Figure 2 Current-regulator diode characteristic with symbol identification. 10 Figure 3 Reverse recovery current waveform . 12 Figure 4 Current and voltage waveforms 13 Figure 5
26、 Circuit diagram for the measurement of IR. 17 Figure 6 Circuit diagram for the measurement of VF18 Figure 7 Circuit diagram for the measurement for Ctot. 18 Figure 8 Circuit diagram for the measurement of tfrand VFRM19 Figure 9 Circuit diagram for the measurement of trr. 20 Figure 10 Circuit diagra
27、m for the measurement of v. 21 Figure 11 Circuit diagram for the measurement of p. 22 Figure 12 Circuit diagram for the measurement of noise current. 23 Figure 13 Circuit diagram for the measurement of VZ24 Figure 14 Circuit diagram for the measurement of Vn. 26 Figure 15 Circuit diagram for the mea
28、surement of IS. 27 Figure 16 Circuit diagram for the measurement of gs(two-voltmeter method) 29 Figure 17 Circuit diagram for the measurement of gs(two-terminal bridge method) . 30 Table 1 Preferred reference diode working voltages Voltages in the E24 series 14 Table 2 Preferred reference diode work
29、ing voltages Voltages in the E12 series 15 Table 3 Acceptance-defining characteristics for acceptance after endurance tests . 32 Table 4 Test circuits and conditions for the endurance tests 33 4 60747-3 IEC:2013 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES Part 3: Discrete devic
30、es: Signal, switching and regulator diodes FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation on all
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39、ees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of this publica
40、tion. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60747-3 has been prepared by subcommittee 47E: Discrete se
41、miconductor devices, of IEC technical committee 47: Semiconductor devices. This second edition cancels and replaces the first edition published in 1985, Amendment 1:1991 and Amendment 2:1993. This edition constitutes a technical revision. This edition includes the following significant technical cha
42、nges with respect to the previous edition: a) All clauses were re-edited to latest IEC publication format and style with all contents from previous publication. b) All clauses have been amended by suitable additions and deletions. This standard is to be read in conjunction with IEC 60747-1:2006 and
43、its Amendment 1 (2010). 60747-3 IEC:2013 5 The text of this standard is based on the following documents: FDIS Report on voting 47E/453/FDIS 47E/455/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publicatio
44、n has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of all parts in the IEC 60747 series, published under the general title Semiconductor devices, can be found on the IEC website. Future standards in this series will carry the new general title as cited above. Titles of exis
45、ting standards in this series will be updated at the time of the next edition. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC web site under “http:/webstore.iec.ch“ in the data related to the specific publication. A
46、t this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. 6 60747-3 IEC:2013 SEMICONDUCTOR DEVICES Part 3: Discrete devices: Signal, switching and regulator diodes 1 Scope This part of IEC 60747 gives the requirements for the following devices: signal di
47、odes (excluding diodes designed to operate at frequencies above several hundred MHz); switching diodes (excluding high power rectifier diodes); voltage-regulator diodes; voltage-reference diodes; current-regulator diodes. 2 Normative references The following documents, in whole or in part, are norma
48、tively referenced in this document and are indispensable for its application. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. IEC 60050 (all parts), International Electrotechnical Vocabula
49、ry (available at ) IEC 60747-1:2006, Semiconductor devices Part 1: General Amendment 1:2010 3 Terms, definitions and graphical symbols For the purposes of this document, the terms and definitions given in IEC 60050-521, IEC 60050-702 and IEC 60747-1, and the following, apply. 3.1 Signal and switching diodes 3.1.1 forward recovery voltage vFRforward voltage occurring during the forward recov
