1、 IEC 60747-2 Edition 3.0 2016-04 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Part 2: Discrete devices Rectifier diodes Dispositifs semiconducteurs Partie 2: Dispositifs discrets Diodes de redressement IEC 60747-2:2016-04(en-fr) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright
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19、uestions contactez-nous: csciec.ch. IEC 60747-2 Edition 3.0 2016-04 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Part 2: Discrete devices Rectifier diodes Dispositifs semiconducteurs Partie 2: Dispositifs discrets Diodes de redressement INTERNATIONAL ELECTROTECHNICAL COMMISSION
20、COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.10 ISBN 978-2-8322-3295-8 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. At
21、tention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. 2 IEC 60747-2:2016 IEC 2016 CONTENTS FOREWORD . 5 1 Scope 7 2 Normative references. 7 3 Terms and definitions 7 3.1 General terms and definitions 7 3.2 Voltages . 8 3.3 Currents 9 3.4 Power dissipation 10
22、3.5 Switching characteristics . 11 4 Letter symbols . 14 4.1 General . 14 4.2 List of letter symbols . 14 4.2.1 Voltages 14 4.2.2 Currents 14 4.2.3 Powers 15 4.2.4 Switching . 15 5 Essential ratings and characteristics 16 5.1 General . 16 5.2 Ratings (limiting conditions) . 16 5.2.1 Storage temperat
23、ure (T stg ) 16 5.2.2 Operating ambient or heatsink or case or junction temperature (T aor T sor T cor T vj ) . 16 5.2.3 Non-repetitive peak reverse voltage (V RSM ) . 16 5.2.4 Repetitive peak reverse voltage (V RRM ) (where appropriate) 16 5.2.5 Continuous (direct) reverse voltage (V R ) (where app
24、ropriate) 16 5.2.6 Mean forward current (I F(AV) ) 16 5.2.7 R.M.S forward current (I F(R.M.S.) ) . 16 5.2.8 Repetitive peak forward current (I FRM ) (where appropriate) . 16 5.2.9 Non-repetitive surge forward current (I FSM ) . 16 5.2.10 Continuous (direct) forward current (I F ) 17 5.2.11 Peak case
25、 non-rupture current (I RSMC ) (where appropriate) 17 5.2.12 Non-repetitive surge reverse power dissipation (P RSM ) (for avalanche rectifier diodes) 17 5.2.13 Repetitive peak reverse power dissipation (P RRM ) (for avalanche rectifier diodes) 17 5.2.14 Mean reverse power dissipation (P R(AV) ) (for
26、 avalanche rectifier diodes)17 5.2.15 Mounting torque (M) (where appropriate) 17 5.2.16 Clamping force (F) for disc type diodes (where appropriate) 17 5.3 Characteristics 17 5.3.1 General . 17 5.3.2 Forward voltage (V F ) 17 5.3.3 Peak forward voltage (V FM ) (where appropriate) 18 5.3.4 Breakdown v
27、oltage (V (BR) ) (of an avalanche rectifier diode) . 18 5.3.5 Continuous (direct) reverse current (I R(D) ) . 18 5.3.6 Repetitive peak reverse current (I RRM ) (where appropriate) . 18 5.3.7 Recovered charge (Q r ) (where appropriate) 18 IEC 60747-2:2016 IEC 2016 3 5.3.8 Total capacitive charge (Q C
28、 ) (where appropriate) . 18 5.3.9 Peak reverse recovery current (I rrm ) (where appropriate) . 18 5.3.10 Reverse recovery time (t rr ) (where appropriate) 19 5.3.11 Reverse recovery energy (E rr ) (where appropriate) . 19 5.3.12 Forward recovery time (t fr ) (where appropriate) 19 5.3.13 Peak forwar
29、d recovery voltage (V FRM ) (where appropriate) 19 5.3.14 Reverse recovery softness factor (S rr ) (where appropriate) . 19 5.3.15 Thermal resistance (R th ) 19 5.3.16 Transient thermal impedance (Z th (t) (where appropriate) . 19 6 Measuring and test methods 19 6.1 Measuring methods for electrical
30、characteristics 19 6.1.1 General . 19 6.1.2 Forward voltage (V F , V FM ) . 20 6.1.3 Breakdown voltage (V (BR) ) of avalanche rectifier diodes 23 6.1.4 Reverse current (I R ) 23 6.1.5 Repetitive peak reverse current (I RRM ) 24 6.1.6 Recovered charge, reverse recovery time, reverse recovery energy a
31、nd softness factor (Q r , t rr , E rr , S rr ) 25 6.1.7 Forward recovery time (t fr ) and peak forward recovery voltage (V frm ) . 30 6.1.8 Total capacitive charge (Q C ) 32 6.2 Measuring methods for thermal characteristics 33 6.2.1 General . 33 6.2.2 Thermal resistance (R th(j-r) ) and transient th
32、ermal impedance (Z th(j- r) (t) . 33 6.3 Verification test methods for ratings (limiting values) 35 6.3.1 Surge (non-repetitive) forward current (I FSM ) . 35 6.3.2 Non-repetitive peak reverse voltage (V RSM ) . 36 6.3.3 Peak reverse power (repetitive or non-repetitive) (P RRM , P RSM ) of avalanche
33、 rectifier diodes . 38 6.3.4 Peak case non-rupture current (I RSCM ) . 41 7 Requirements for type tests, routine tests and endurance tests; marking of rectifier diodes . 43 7.1 Type tests . 43 7.2 Routine tests . 43 7.3 Measuring and test methods 44 7.4 Marking of rectifier diodes . 44 7.5 Endurance
34、 test 44 7.5.1 List of endurance tests . 44 7.5.2 Conditions for endurance tests . 44 7.5.3 Acceptance-defining characteristics and acceptance criteria for endurance tests . 44 7.5.4 Acceptance-defining characteristics and acceptance criteria for reliability tests 45 Figure 1 Voltage waveform during
35、 forward recovery, specification method I . 11 Figure 2 Voltage waveform during forward recovery, specification method II 11 Figure 3 Current waveform during reverse recovery 12 Figure 4 Diode turn-off, voltage, current and recovered charge . 13 Figure 5 Reverse voltage ratings 14 4 IEC 60747-2:2016
36、 IEC 2016 Figure 6 Forward current ratings 15 Figure 7 Recovered charge Q r , peak reverse recovery current I rrm , reverse recovery time t rr(idealized characteristics) 18 Figure 8 Circuit diagram for the measurement of forward voltage (d.c. method) 20 Figure 9 Circuit diagram for the measurement o
37、f forward voltage (oscilloscope method) 21 Figure 10 Graphic representation of on-state voltage versus current characteristic . 21 Figure 11 Circuit diagram for forward voltage measurement (pulse method) . 22 Figure 12 Circuit diagram for breakdown voltage measurement . 23 Figure 13 Circuit diagram
38、for reverse current measurement 24 Figure 14 Circuit diagram for peak reverse current measurement 25 Figure 15 Circuit diagram for recovered charge measurement, half sinusoidal wave method . 26 Figure 16 Current waveform through the diode D during recovered charge measurement, half sinusoidal wave m
39、ethod . 26 Figure 17 Circuit diagram for recovered charge measurement, rectangular wave method . 28 Figure 18 Current waveform through the diode D recovered charge measurement, rectangular wave method 28 Figure 19 Circuit diagram for forward recovery time measurement 30 Figure 20 Current waveform fo
40、rward recovery time measurement . 30 Figure 21 Voltage waveform forward recovery time measurement . 31 Figure 22 Circuit diagram for total capacitive charge measurement . 32 Figure 23 Circuit diagram for thermal impedance measurement 33 Figure 24 Calibration curve showing a typical variation of the
41、forward voltage V F at a low measuring current I 2 with the case temperature T c (when heated from outside, i.e. T c = T vj ) . 34 Figure 25 Circuit diagram for surge forward current measurement . 35 Figure 26 Circuit diagram for peak reverse voltage measurement 37 Figure 27 Circuit to verify peak r
42、everse power of avalanche rectifier diodes 38 Figure 28 Triangular reverse current waveform . 39 Figure 29 Sinusoidal reverse current waveform. 39 Figure 30 Rectangular reverse current waveform 40 Figure 31 Verification of P RSMreverse power versus breakdown 41 Figure 32 Circuit diagram for case non
43、-rupture current measurement 42 Figure 33 Waveform of the reverse current i Rthrough the diode under test . 42 Table 1 Minimum type and routine tests for rectifier diodes . 44 Table 2 Acceptance-defining characteristics for acceptance after endurance tests 45 IEC 60747-2:2016 IEC 2016 5 INTERNATIONA
44、L ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES Part 2: Discrete devices Rectifier diodes FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of
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