1、 IEC 60747-16-5 Edition 1.0 2013-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Part 16-5: Microwave integrated circuits Oscillators Dispositifs semiconducteurs Partie 16-5: Circuits intgrs hyperfrquences Oscillateurs IEC60747-16-5:2013 THIS PUBLICATION IS COPYRIGHT PROTECTED C
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15、rotechnique International (VEI) en ligne. Service Clients - webstore.iec.ch/csc Si vous dsirez nous donner des commentaires sur cette publication ou si vous avez des questions contactez-nous: csciec.ch. IEC 60747-16-5 Edition 1.0 2013-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devi
16、ces Part 16-5: Microwave integrated circuits Oscillators Dispositifs semiconducteurs Partie 16-5: Circuits intgrs hyperfrquences Oscillateurs INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE X ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-83220-827-4 Registered tr
17、ademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr
18、. 2 60747-16-5 IEC:2013 CONTENTS FOREWORD . 6 1 Scope . 8 2 Normative references . 8 3 Terms and definitions . 8 4 Essential ratings and characteristics . 11 4.1 General requirements 11 4.1.1 Circuit identification and types . 11 4.1.2 General function description 11 4.1.3 Manufacturing technology 1
19、1 4.1.4 Package identification 11 4.2 Application description 11 4.2.1 Conformance to system and/or interface information . 11 4.2.2 Overall block diagram 11 4.2.3 Reference data 11 4.2.4 Electrical compatibility . 12 4.2.5 Associated devices 12 4.3 Specification of the function 12 4.3.1 Detailed bl
20、ock diagram Functional blocks . 12 4.3.2 Identification and function of terminals . 12 4.3.3 Function description 13 4.4 Limiting values (absolute maximum rating system) 13 4.4.1 Requirements 13 4.4.2 Electrical limiting values 14 4.4.3 Temperatures 14 4.5 Operating conditions (within the specified
21、operating temperature range) . 15 4.6 Electrical characteristics 15 4.7 Mechanical and environmental ratings, characteristics and data 16 4.8 Additional information 16 5 Measuring methods 16 5.1 General . 16 5.1.1 General precautions 16 5.1.2 Characteristic impedance 17 5.1.3 Handling precautions .
22、17 5.1.4 Types 17 5.2 Oscillation frequency (fosc) . 17 5.2.1 Purpose . 17 5.2.2 Circuit diagram 17 5.2.3 Principle of measurement 17 5.2.4 Circuit description and requirements 17 5.2.5 Precautions to be observed . 17 5.2.6 Measurement procedure 18 5.2.7 Specified conditions 18 5.3 Output power (Po,
23、osc) . 18 5.3.1 Purpose . 18 5.3.2 Circuit diagram 18 5.3.3 Principle of measurement 18 60747-16-5 IEC:2013 3 5.3.4 Circuit description and requirements 18 5.3.5 Precautions to be observed . 18 5.3.6 Measurement procedure 18 5.3.7 Specified conditions 18 5.4 Phase noise (L (f) 19 5.4.1 Purpose . 19
24、5.4.2 Measuring methods . 19 5.5 Tuning sensitivity (Sf,v) 24 5.5.1 Purpose . 24 5.5.2 Circuit diagram 24 5.5.3 Principle of measurement 24 5.5.4 Circuit description and requirements 24 5.5.5 Precautions to be observed . 24 5.5.6 Measurement procedure 24 5.5.7 Specified conditions 24 5.6 Frequency p
25、ushing (fosc,push) 24 5.6.1 Purpose . 24 5.6.2 Circuit diagram 25 5.6.3 Principle of measurement 25 5.6.4 Circuit description and requirements 25 5.6.5 Precautions to be observed . 25 5.6.6 Measurement procedure 25 5.6.7 Specified conditions 25 5.7 Frequency pulling (fosc,pull) 25 5.7.1 Purpose . 25
26、 5.7.2 Circuit diagram 25 5.7.3 Principle of measurement 26 5.7.4 Circuit description and requirements 26 5.7.5 Precautions to be observed . 26 5.7.6 Measurement procedure 26 5.7.7 Specified conditions 27 5.8 n-th order harmonic distortion ratio (Pnth/P1) 27 5.8.1 Purpose . 27 5.8.2 Circuit diagram
27、27 5.8.3 Principle of measurement 27 5.8.4 Circuit description and requirements 27 5.8.5 Measurement procedure 27 5.8.6 Specified conditions 27 5.9 Output power flatness (Po,osc) 28 5.9.1 Purpose . 28 5.9.2 Circuit diagram 28 5.9.3 Principle of measurement 28 5.9.4 Circuit description and requiremen
28、ts 28 5.9.5 Precautions to be observed . 28 5.9.6 Measurement procedure 28 5.9.7 Specified conditions 28 5.10 Tuning linearity 28 5.10.1 Purpose . 28 5.10.2 Circuit diagram 28 4 60747-16-5 IEC:2013 5.10.3 Principle of measurement 29 5.10.4 Circuit description and requirements 29 5.10.5 Precautions t
29、o be observed . 29 5.10.6 Measurement procedure 29 5.10.7 Specified conditions 30 5.11 Frequency temperature coefficient (f,temp) . 30 5.11.1 Purpose . 30 5.11.2 Circuit diagram 30 5.11.3 Principle of measurement 30 5.11.4 Circuit description and requirements 31 5.11.5 Precautions to be observed . 3
30、1 5.11.6 Measurement procedure 31 5.11.7 Specified conditions 31 5.12 Output power temperature coefficient (P,temp) 31 5.12.1 Purpose . 31 5.12.2 Circuit diagram 31 5.12.3 Principle of measurement 31 5.12.4 Circuit description and requirements 32 5.12.5 Precautions to be observed . 32 5.12.6 Measure
31、ment procedure 32 5.12.7 Specified conditions 32 5.13 Spurious distortion ratio (Ps/P1) 32 5.13.1 Purpose . 32 5.13.2 Circuit diagram 32 5.13.3 Principle of measurement 32 5.13.4 Circuit description and requirements 33 5.13.5 Measurement procedure 33 5.13.6 Specified conditions 33 5.14 Modulation ba
32、ndwidth (Bmod) 33 5.14.1 Purpose . 33 5.14.2 Circuit diagram 33 5.14.3 Principle of measurement 34 5.14.4 Circuit description and requirements 34 5.14.5 Precautions to be observed . 34 5.14.6 Measurement procedure 34 5.14.7 Specified conditions 35 5.15 Sensitivity flatness 35 5.15.1 Purpose . 35 5.1
33、5.2 Circuit diagram 35 5.15.3 Principle of measurement 35 5.15.4 Circuit description and requirements 36 5.15.5 Precautions to be observed . 36 5.15.6 Measurement procedure 36 5.15.7 Specified conditions 36 6 Verifying methods . 36 6.1 Load mismatch tolerance (L) . 36 6.1.1 Purpose . 36 6.1.2 Verify
34、ing method 1 (spurious intensity) 36 60747-16-5 IEC:2013 5 6.1.3 Verifying method 2 (no discontinuity of frequency tuning characteristics of VCO) 37 6.2 Load mismatch ruggedness (R) 38 6.2.1 Purpose . 38 6.2.2 Circuit diagram 38 6.2.3 Circuit description and requirements 38 6.2.4 Precautions to be o
35、bserved . 38 6.2.5 Test Procedure 38 6.2.6 Specified conditions 39 Bibliography 40 Figure 1 Circuit diagram for the measurement of the oscillation frequency fosc17 Figure 2 Circuit diagram for the measurement of the phase noise L (f) (method 1) . 20 Figure 3 Circuit diagram for the measurement of th
36、e phase noise L (f) (method 2) . 21 Figure 4 Circuit diagram for the measurement of the phase noise L (f) (method 3) . 22 Figure 5 Circuit diagram for the measurement of the frequency pulling fosc,pull26 Figure 6 Tuning linearity 29 Figure 7 Circuit diagram for the measurement of the oscillation fre
37、quency temperature coefficient f,temp30 Figure 8 Circuit diagram for the measurement of the modulation bandwidth Bmod. 34 Figure 9 Sensitivity flatness . 36 Table 1 Comparison of phase noise measuring methods 19 6 60747-16-5 IEC:2013 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES
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48、is publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60747-16-5 has been prepared by subcommittee 47E
49、: Discrete semiconductor devices, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47E/452/FDIS 47E/454/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. A list of
