1、INTERNATIONALSTANDARDIEC60747-16-3First edition2002-05Semiconductor devices Part 16-3:Microwave integrated circuits Frequency convertersDispositifs semiconducteurs Partie 16-3:Circuits intgrs hyperfrquences Convertisseurs de frquenceReference numberIEC 60747-16-3:2002(E)Copyright International Elect
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9、 license from IHS-,-INTERNATIONALSTANDARDIEC60747-16-3First edition2002-05Semiconductor devices Part 16-3:Microwave integrated circuits Frequency convertersDispositifs semiconducteurs Partie 16-3:Circuits intgrs hyperfrquences Convertisseurs de frquence IEC 2002 Copyright - all rights reservedNo par
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12、IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 2 60747-16-3 IEC:2002(E)CONTENTSFOREWORD.31 Scope.42 Normative references .43 Terms and definitions .44 Abbreviated terms 65 Essential ratings and characteristics.65.1 General .65.2 Application description 75.3 Spec
13、ification of the function 85.4 Limiting values (absolute maximum rating system) 95.5 Operating conditions (within the specified operating temperature range) .115.6 Electrical characteristics115.7 Mechanical and environmental ratings, characteristics and data125.8 Additional information126 Measuring
14、methods 136.1 General .136.2 Conversion gain (Gc) .146.3 Conversion gain flatness (Gc)166.4 LO/IF isolation (PLO /PLO(IF) .186.5 LO/RF isolation (PLO /PLO(RF).196.6 RF/IF isolation.206.7 Image rejection (Po /Po(im) 246.8 Sideband suppression (Po /Po(U).266.9 Output power (Po)286.10 Output power at 1
15、-dB conversion compression (Po(1dB) 296.11 Noise figure (F) .306.12 Intermodulation distortion (Pn /P1)326.13 Output power at the intercept point (for intermodulation products) (Pn(IP) .356.14 LO port return loss (Lret(LO) 366.15 RF port return loss (Lret(RF) 376.16 IF port return loss (Lret(IF).39F
16、igure 1 Electrical terminal symbols.9Figure 2 Circuit diagram for the measurement of conversion gain 14Figure 3 Circuit diagram for the measurement of the LO/IF isolation 18Figure 4 Circuit diagram for the measurement of the LO/RF isolation.19Figure 5 Circuit diagram for the measurement of the RF/IF
17、 isolation for type A 21Figure 6 Circuit diagram for the measurement of the RF/IF isolation for type B 23Figure 7 Circuit diagram for measurement of noise figure 30Figure 8 Circuit for the measurement of intermodulation distortion .33Figure 9 Circuit for the measurement of the LO port return loss .3
18、6Figure 10 Circuit for the measurement of the RF/IF port return loss .38Table 1 Function of terminal.8Table 2 Electrical limiting values 10Table 3 Electrical characteristics12Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or ne
19、tworking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION_SEMICONDUCTOR DEVICES Part 16-3: Microwave integrated circuits Frequency convertersFOREWORD1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardi
20、zation comprisingall national electrotechnical committees (IEC National Committees). The object of the IEC is to promoteinternational co-operation on all questions concerning standardization in the electrical and electronic fields. Tothis end and in addition to other activities, the IEC publishes In
21、ternational Standards. Their preparation isentrusted to technical committees; any IEC National Committee interested in the subject dealt with mayparticipate in this preparatory work. International, governmental and non-governmental organizations liaisingwith the IEC also participate in this preparat
22、ion. The IEC collaborates closely with the InternationalOrganization for Standardization (ISO) in accordance with conditions determined by agreement between thetwo organizations.2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, aninternational cons
23、ensus of opinion on the relevant subjects since each technical committee has representationfrom all interested National Committees.3) The documents produced have the form of recommendations for international use and are published in the formof standards, technical specifications, technical reports o
24、r guides and they are accepted by the NationalCommittees in that sense.4) In order to promote international unification, IEC National Committees undertake to apply IEC InternationalStandards transparently to the maximum extent possible in their national and regional standards. Anydivergence between
25、the IEC Standard and the corresponding national or regional standard shall be clearlyindicated in the latter.5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for anyequipment declared to be in conformity with one of its standards.6) Attention is dr
26、awn to the possibility that some of the elements of this International Standard may be the subjectof patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.International Standard IEC 60747-16-3 has been prepared by subcommittee 47E: Discretesemiconductor d
27、evices, of IEC technical committee 47: Semiconductor devices.The text of this standard is based on the following documents:FDIS Report on voting47E/212/FDIS 47E/219/RVDFull information on the voting for the approval of this standard can be found in the report onvoting indicated in the above table.Th
28、is publication has been drafted in accordance with the ISO/IEC Directives, Part 3.The committee has decided that the contents of this publication will remain unchanged until2008. At this date, the publication will be reconfirmed; withdrawn; replaced by a revised edition, or amended.Copyright Interna
29、tional Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 4 60747-16-3 IEC:2002(E)SEMICONDUCTOR DEVICES Part 16-3: Microwave integrated circuits Frequency converters1 ScopeThis part of IEC 60747 provides
30、 new measuring methods, terminology and letter symbols, aswell as essential ratings and characteristics for integrated circuit microwave frequencyconverters.2 Normative referencesThe following referenced documents are indispensable for the application of this document.For dated references, only the
31、edition cited applies. For undated references, the latest editionof the referenced document (including any amendments) applies.IEC 60617-12, Graphical symbols for diagrams Part 12: Binary logic elementsIEC 60617-13, Graphical symbols for diagrams Part 13: Analogue elementsIEC 60747-1:1983, Semicondu
32、ctor devices Discrete devices and integrated circuits Part 1:GeneralIEC 60748-2:1997, Semiconductor devices Integrated circuits Part 2: Digital integratedcircuitsIEC 60748-3, Semiconductor devices Integrated circuits Part 3: Analogue integrated circuitsIEC 60748-4, Semiconductor devices Integrated c
33、ircuits Part 4: Interface integrated circuits3 Terms and definitionsFor the purpose of this part of IEC 60747, the following terms and definitions apply:3.1conversion gain, Gcratio of the desired converted output power to the input powerNOTE Usually, the conversion gain is expressed in decibels.3.2c
34、onversion gain flatness, Gcdifference between the maximum and the minimum conversion gain for a specified inputpower in a specified frequency range3.3LO/RF isolation, PLO/PLO(RF)ratio of the incident local power to the local leakage power at the RF port with the IF portterminated in a specified impe
35、danceCopyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 5 3.4LO/IF isolation, PLO/PLO(IF)ratio of the incident local power to the local leakage power at the
36、IF port with the RF portterminated in a specified impedance3.5RF/IF isolation, PRF/PRF(IF)ratio of the incident RF power to the RF feedthrough power at the IF port for a specifiedlocal powerNOTE Usually, the RF/IF isolation is applied to the down-converter.3.6IF/RF isolation, PIF/PIF(RF)ratio of the
37、 incident IF power to the IF feedthrough power at the RF port for a specifiedlocal powerNOTE Usually, the IF/RF isolation is applied to the up-converter.3.7image rejection, Po/Po(im)ratio of the output power when the RF signal is applied, to the output power when the imagesignal is appliedNOTE Usual
38、ly, the image rejection is applied to the down-converter.3.8sideband suppression, Po/Po(U)ratio of the output power of the desired sideband to the output power of the undesiredsidebandNOTE Usually, the sideband suppression is applied to the up-converter.3.9LO port return loss, Lret(LO)ratio of the s
39、pecified incident power at the LO port to the reflected power at the LO port, withthe RF port and the IF port terminated in each specified impedance3.10RF port return loss, Lret(RF)ratio of the incident power at the RF port to the reflected power at the RF port for a specifiedlocal power, with the I
40、F port terminated in a specified impedance3.11IF port return loss, Lret(IF)ratio of the incident power at the IF port to the reflected power at the IF port for a specifiedlocal power, with the RF port terminated in a specified impedance3.12output power, Posee IEC 60747-16-2, 3.313.13output power at
41、1-dB conversion compression, Po(1dB)output power where the conversion gain decreases by 1 dB compared with the linearconversion gain1IEC 60747-16-2:2001, Semiconductor devices Part 16-2: Microwave integrated circuits Frequency prescalersCopyright International Electrotechnical Commission Provided by
42、 IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,- 6 60747-16-3 IEC:2002(E)3.14noise figure, Fsee IEC 60747-1 Chapter IV, 5.4.43.15intermodulation distortion, Pn/P1ratio of the output power of the nth order component to the output power of th
43、e fundamentalcomponent, at a specified input power3.16output power at the intercept point (for intermodulation products), Pn(IP)output power at the intersection between the extrapolated output powers of the fundamentalcomponent and the nth order intermodulation components, when the extrapolation is
44、carriedout in a diagram showing the output power of the components (in decibels) as a function ofthe input power (in decibels)4 Abbreviated termsThe abbreviations used in this part of IEC 60747 are as follows:RF Radio Frequency;IF Intermediate Frequency;LO Local Oscillator.5 Essential ratings and ch
45、aracteristics5.1 GeneralThis clause gives ratings and characteristics required for specifying integrated circuitmicrowave frequency converters.5.1.1 Circuit identification and types5.1.1.1 Designation and typesThe identification of type (device name), the category of circuit and technology applied s
46、hallbe given.Microwave frequency converters are divided into two categories: type A: down-converter; type B: up-converter.5.1.1.2 General function descriptionA general description shall be made of the function performed by the integrated circuitmicrowave frequency converters and the features for the
47、 application.5.1.1.3 Manufacturing technologyThe manufacturing technology, for example, semiconductor monolithic integrated circuit, thinfilm integrated circuit, micro-assembly, shall be stated. This statement shall include detailsof the semiconductor technologies such as Schottoky-barrier diode, ME
48、SFET, Si bipolartransistor, HBT.Copyright International Electrotechnical Commission Provided by IHS under license with IECNot for ResaleNo reproduction or networking permitted without license from IHS-,-60747-16-3 IEC:2002(E) 7 5.1.1.4 Package identificationThe following shall be stated:a) chip or packaged form;b) IEC and/or national reference number of the outline drawing, or of drawing of non-standardpackage including terminal numbering;c) principal package material, for example, metal, ceramic, plastic;d) for chip for
